Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance

Isao TAKENAKA; Hidemasa TAKAHASHI; Kazunori ASANO; Kohji ISHIKURA; Junko MORIKAWA; Hiroaki TSUTSUI; Masaaki KUZUHARA

Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance

Isao TAKENAKA, Hidemasa TAKAHASHI, Kazunori ASANO, Kohji ISHIKURA, Junko MORIKAWA, Hiroaki TSUTSUI, Masaaki KUZUHARA

Full Text Views

0

Cite this

Summary :

This paper describes a high-power and low-distortion AlGaAs/GaAs HFET amplifier developed for digital cellular base station system. We proved experimentally that distortion characteristics such as IMD (Intermodulation Distortion) or NPR (Noise Power Ratio) are drastically degraded when the absolute value of the drain bias circuit impedance at low frequency are high. Based on the experimental results, we have designed the drain bias circuit not to influence the distortion characteristics. The developed amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The push-pull amplifier demonstrated state-of-the-art performance of 140 W output-power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance of less than 30 dBc at two-tone total output-power of 46 dBm. These results indicate that the design of the drain bias circuit is of great importance to achieve improved IMD characteristics while maintaining high power performance.

Publication: IEICE TRANSACTIONS on Electronics Vol.E82-C No.5 pp.730-736

Publication Date: 1999/05/25

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)

Category

Cite this

Copy

Isao TAKENAKA, Hidemasa TAKAHASHI, Kazunori ASANO, Kohji ISHIKURA, Junko MORIKAWA, Hiroaki TSUTSUI, Masaaki KUZUHARA, "Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance" in IEICE TRANSACTIONS on Electronics, vol. E82-C, no. 5, pp. 730-736, May 1999, doi: .
Abstract: This paper describes a high-power and low-distortion AlGaAs/GaAs HFET amplifier developed for digital cellular base station system. We proved experimentally that distortion characteristics such as IMD (Intermodulation Distortion) or NPR (Noise Power Ratio) are drastically degraded when the absolute value of the drain bias circuit impedance at low frequency are high. Based on the experimental results, we have designed the drain bias circuit not to influence the distortion characteristics. The developed amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The push-pull amplifier demonstrated state-of-the-art performance of 140 W output-power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance of less than 30 dBc at two-tone total output-power of 46 dBm. These results indicate that the design of the drain bias circuit is of great importance to achieve improved IMD characteristics while maintaining high power performance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_5_730/_p

Copy

@ARTICLE{e82-c_5_730,
author={Isao TAKENAKA, Hidemasa TAKAHASHI, Kazunori ASANO, Kohji ISHIKURA, Junko MORIKAWA, Hiroaki TSUTSUI, Masaaki KUZUHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance},
year={1999},
volume={E82-C},
number={5},
pages={730-736},
abstract={This paper describes a high-power and low-distortion AlGaAs/GaAs HFET amplifier developed for digital cellular base station system. We proved experimentally that distortion characteristics such as IMD (Intermodulation Distortion) or NPR (Noise Power Ratio) are drastically degraded when the absolute value of the drain bias circuit impedance at low frequency are high. Based on the experimental results, we have designed the drain bias circuit not to influence the distortion characteristics. The developed amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The push-pull amplifier demonstrated state-of-the-art performance of 140 W output-power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance of less than 30 dBc at two-tone total output-power of 46 dBm. These results indicate that the design of the drain bias circuit is of great importance to achieve improved IMD characteristics while maintaining high power performance.},
keywords={},
doi={},
ISSN={},
month={May},}

Copy

TY - JOUR
TI - Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance
T2 - IEICE TRANSACTIONS on Electronics
SP - 730
EP - 736
AU - Isao TAKENAKA
AU - Hidemasa TAKAHASHI
AU - Kazunori ASANO
AU - Kohji ISHIKURA
AU - Junko MORIKAWA
AU - Hiroaki TSUTSUI
AU - Masaaki KUZUHARA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1999
AB - This paper describes a high-power and low-distortion AlGaAs/GaAs HFET amplifier developed for digital cellular base station system. We proved experimentally that distortion characteristics such as IMD (Intermodulation Distortion) or NPR (Noise Power Ratio) are drastically degraded when the absolute value of the drain bias circuit impedance at low frequency are high. Based on the experimental results, we have designed the drain bias circuit not to influence the distortion characteristics. The developed amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The push-pull amplifier demonstrated state-of-the-art performance of 140 W output-power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance of less than 30 dBc at two-tone total output-power of 46 dBm. These results indicate that the design of the drain bias circuit is of great importance to achieve improved IMD characteristics while maintaining high power performance.
ER -