This paper describes amplification with improved linearity by employing a linearizing circuit in an input circuit of an internally-matched Ku-band high power amplifier. The linearizing circuit is composed of series L, C, R and an FET with grounded source and drain, and is connected between the input signal line and ground. This linearizing circuit was applied to a Ku-band 10 W output power amplifier utilizing a 25.2 mm gate-width double-doped Heterojunction FET. The power amplifier demonstrated a 8 dB reduction of the third-order intermodulation at about 6 dB output power backoff point from the 2 dB output compression point.
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Kohji MATSUNAGA, Yasuhiro OKAMOTO, Mikio KANAMORI, "Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 5, pp. 744-749, May 1999, doi: .
Abstract: This paper describes amplification with improved linearity by employing a linearizing circuit in an input circuit of an internally-matched Ku-band high power amplifier. The linearizing circuit is composed of series L, C, R and an FET with grounded source and drain, and is connected between the input signal line and ground. This linearizing circuit was applied to a Ku-band 10 W output power amplifier utilizing a 25.2 mm gate-width double-doped Heterojunction FET. The power amplifier demonstrated a 8 dB reduction of the third-order intermodulation at about 6 dB output power backoff point from the 2 dB output compression point.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_5_744/_p
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@ARTICLE{e82-c_5_744,
author={Kohji MATSUNAGA, Yasuhiro OKAMOTO, Mikio KANAMORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain},
year={1999},
volume={E82-C},
number={5},
pages={744-749},
abstract={This paper describes amplification with improved linearity by employing a linearizing circuit in an input circuit of an internally-matched Ku-band high power amplifier. The linearizing circuit is composed of series L, C, R and an FET with grounded source and drain, and is connected between the input signal line and ground. This linearizing circuit was applied to a Ku-band 10 W output power amplifier utilizing a 25.2 mm gate-width double-doped Heterojunction FET. The power amplifier demonstrated a 8 dB reduction of the third-order intermodulation at about 6 dB output power backoff point from the 2 dB output compression point.},
keywords={},
doi={},
ISSN={},
month={May},}
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TY - JOUR
TI - Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain
T2 - IEICE TRANSACTIONS on Electronics
SP - 744
EP - 749
AU - Kohji MATSUNAGA
AU - Yasuhiro OKAMOTO
AU - Mikio KANAMORI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1999
AB - This paper describes amplification with improved linearity by employing a linearizing circuit in an input circuit of an internally-matched Ku-band high power amplifier. The linearizing circuit is composed of series L, C, R and an FET with grounded source and drain, and is connected between the input signal line and ground. This linearizing circuit was applied to a Ku-band 10 W output power amplifier utilizing a 25.2 mm gate-width double-doped Heterojunction FET. The power amplifier demonstrated a 8 dB reduction of the third-order intermodulation at about 6 dB output power backoff point from the 2 dB output compression point.
ER -