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A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation

Alexander BURENKOV, Klaus TIETZEL, Andreas HOSSINGER, Jurgen LORENZ, Heiner RYSSEL, Siegfried SELBERHERR

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Summary :

The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and the Monte-Carlo simulation method.

Publication
IEICE TRANSACTIONS on Electronics Vol.E83-C No.8 pp.1259-1266
Publication Date
2000/08/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category
Process Modeling and Simulation

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