A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Summary :
The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and the Monte-Carlo simulation method.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.8 pp.1259-1266
- Publication Date
- 2000/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
- Category
- Process Modeling and Simulation
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Alexander BURENKOV, Klaus TIETZEL, Andreas HOSSINGER, Jurgen LORENZ, Heiner RYSSEL, Siegfried SELBERHERR, "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1259-1266, August 2000, doi: .
Abstract: The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and the Monte-Carlo simulation method.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1259/_p
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@ARTICLE{e83-c_8_1259,
author={Alexander BURENKOV, Klaus TIETZEL, Andreas HOSSINGER, Jurgen LORENZ, Heiner RYSSEL, Siegfried SELBERHERR, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation},
year={2000},
volume={E83-C},
number={8},
pages={1259-1266},
abstract={The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and the Monte-Carlo simulation method.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1259
EP - 1266
AU - Alexander BURENKOV
AU - Klaus TIETZEL
AU - Andreas HOSSINGER
AU - Jurgen LORENZ
AU - Heiner RYSSEL
AU - Siegfried SELBERHERR
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and the Monte-Carlo simulation method.
ER -
English
