The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and the Monte-Carlo simulation method.
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Alexander BURENKOV, Klaus TIETZEL, Andreas HOSSINGER, Jurgen LORENZ, Heiner RYSSEL, Siegfried SELBERHERR, "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1259-1266, August 2000, doi: .
Abstract: The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and the Monte-Carlo simulation method.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1259/_p
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@ARTICLE{e83-c_8_1259,
author={Alexander BURENKOV, Klaus TIETZEL, Andreas HOSSINGER, Jurgen LORENZ, Heiner RYSSEL, Siegfried SELBERHERR, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation},
year={2000},
volume={E83-C},
number={8},
pages={1259-1266},
abstract={The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and the Monte-Carlo simulation method.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1259
EP - 1266
AU - Alexander BURENKOV
AU - Klaus TIETZEL
AU - Andreas HOSSINGER
AU - Jurgen LORENZ
AU - Heiner RYSSEL
AU - Siegfried SELBERHERR
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and the Monte-Carlo simulation method.
ER -