The model to calculate high frequency C-V characteristics of ferroelectric capacitors that have not been modeled yet is presented. At first, P-V hysteresis model necessary to calculate C-V characteristics is improved by introducing two modification factors and by comparing with experimental results. Then, other parameters to express high frequency C-V characteristic of the metal/ferroelectric/metal structure are derived, in which the response for AC signal input is considered. Finally, it has been shown that these models predict well the C-V hysteresis shapes of the MFIS and the MFMIS structures.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Nobuhito OGATA, Hiroshi ISHIWARA, "A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 777-784, June 2001, doi: .
Abstract: The model to calculate high frequency C-V characteristics of ferroelectric capacitors that have not been modeled yet is presented. At first, P-V hysteresis model necessary to calculate C-V characteristics is improved by introducing two modification factors and by comparing with experimental results. Then, other parameters to express high frequency C-V characteristic of the metal/ferroelectric/metal structure are derived, in which the response for AC signal input is considered. Finally, it has been shown that these models predict well the C-V hysteresis shapes of the MFIS and the MFMIS structures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_777/_p
Copy
@ARTICLE{e84-c_6_777,
author={Nobuhito OGATA, Hiroshi ISHIWARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors},
year={2001},
volume={E84-C},
number={6},
pages={777-784},
abstract={The model to calculate high frequency C-V characteristics of ferroelectric capacitors that have not been modeled yet is presented. At first, P-V hysteresis model necessary to calculate C-V characteristics is improved by introducing two modification factors and by comparing with experimental results. Then, other parameters to express high frequency C-V characteristic of the metal/ferroelectric/metal structure are derived, in which the response for AC signal input is considered. Finally, it has been shown that these models predict well the C-V hysteresis shapes of the MFIS and the MFMIS structures.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors
T2 - IEICE TRANSACTIONS on Electronics
SP - 777
EP - 784
AU - Nobuhito OGATA
AU - Hiroshi ISHIWARA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - The model to calculate high frequency C-V characteristics of ferroelectric capacitors that have not been modeled yet is presented. At first, P-V hysteresis model necessary to calculate C-V characteristics is improved by introducing two modification factors and by comparing with experimental results. Then, other parameters to express high frequency C-V characteristic of the metal/ferroelectric/metal structure are derived, in which the response for AC signal input is considered. Finally, it has been shown that these models predict well the C-V hysteresis shapes of the MFIS and the MFMIS structures.
ER -