IEICE TRANSACTIONS on Electronics
A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors
Summary :
A behavioral model for ferroelectric capacitors is developed. There are two requirements for the circuit simulation model; one is to reproduce the hysteretic behavior of the polarization under arbitrary voltage history, and the other is to describe the time dependence of polarization change. A parallel element model has been proposed to meet the first requirement. This model reproduces the minor loops of the hysteresis by assuming that the ferroelectric capacitor consists of the parallel capacitors of different polarization and coercive voltages. In order to add the function to describe the time dependence of the polarization change, we propose a method of measuring the switching response for individual parallel elements and the model which describes the response. In the measurement, the voltage applied to the capacitor is raised in two steps. After the first step, the voltage is kept at an intermediate level for a period of time, then raised again to the final level and the polarization change was recorded as a function of time. Because the capacitor elements with the coercive voltage lower than the intermediate level complete switching during the first step, the polarization change of the whole capacitor during the second step is attributed to the capacitor elements with the coercive voltage higher than the intermediate level. This procedure is repeated with changing the intermediate level, and the switching response of each capacitor element is obtained by taking the finite differences between the adjacent sets of data. The measurement on a sol-gel derived SrBi2Ta2O9 capacitor revealed that the switching time depended only on the difference between the applied voltage and the coercive voltage of each capacitor element. The time dependence of the polarization change is implemented to the model by inserting a nonlinear resistor in series with each capacitor, which reproduces the polarization switching under arbitrary voltage change without any fitting parameters.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.6 pp.785-790
- Publication Date
- 2001/06/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Nonvolatile Memories)
- Category
- FeRAMs
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Tetsuro TAMURA, Yoshihiro ARIMOTO, Hiroshi ISHIWARA, "A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 785-790, June 2001, doi: .
Abstract: A behavioral model for ferroelectric capacitors is developed. There are two requirements for the circuit simulation model; one is to reproduce the hysteretic behavior of the polarization under arbitrary voltage history, and the other is to describe the time dependence of polarization change. A parallel element model has been proposed to meet the first requirement. This model reproduces the minor loops of the hysteresis by assuming that the ferroelectric capacitor consists of the parallel capacitors of different polarization and coercive voltages. In order to add the function to describe the time dependence of the polarization change, we propose a method of measuring the switching response for individual parallel elements and the model which describes the response. In the measurement, the voltage applied to the capacitor is raised in two steps. After the first step, the voltage is kept at an intermediate level for a period of time, then raised again to the final level and the polarization change was recorded as a function of time. Because the capacitor elements with the coercive voltage lower than the intermediate level complete switching during the first step, the polarization change of the whole capacitor during the second step is attributed to the capacitor elements with the coercive voltage higher than the intermediate level. This procedure is repeated with changing the intermediate level, and the switching response of each capacitor element is obtained by taking the finite differences between the adjacent sets of data. The measurement on a sol-gel derived SrBi2Ta2O9 capacitor revealed that the switching time depended only on the difference between the applied voltage and the coercive voltage of each capacitor element. The time dependence of the polarization change is implemented to the model by inserting a nonlinear resistor in series with each capacitor, which reproduces the polarization switching under arbitrary voltage change without any fitting parameters.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_785/_p
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@ARTICLE{e84-c_6_785,
author={Tetsuro TAMURA, Yoshihiro ARIMOTO, Hiroshi ISHIWARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors},
year={2001},
volume={E84-C},
number={6},
pages={785-790},
abstract={A behavioral model for ferroelectric capacitors is developed. There are two requirements for the circuit simulation model; one is to reproduce the hysteretic behavior of the polarization under arbitrary voltage history, and the other is to describe the time dependence of polarization change. A parallel element model has been proposed to meet the first requirement. This model reproduces the minor loops of the hysteresis by assuming that the ferroelectric capacitor consists of the parallel capacitors of different polarization and coercive voltages. In order to add the function to describe the time dependence of the polarization change, we propose a method of measuring the switching response for individual parallel elements and the model which describes the response. In the measurement, the voltage applied to the capacitor is raised in two steps. After the first step, the voltage is kept at an intermediate level for a period of time, then raised again to the final level and the polarization change was recorded as a function of time. Because the capacitor elements with the coercive voltage lower than the intermediate level complete switching during the first step, the polarization change of the whole capacitor during the second step is attributed to the capacitor elements with the coercive voltage higher than the intermediate level. This procedure is repeated with changing the intermediate level, and the switching response of each capacitor element is obtained by taking the finite differences between the adjacent sets of data. The measurement on a sol-gel derived SrBi2Ta2O9 capacitor revealed that the switching time depended only on the difference between the applied voltage and the coercive voltage of each capacitor element. The time dependence of the polarization change is implemented to the model by inserting a nonlinear resistor in series with each capacitor, which reproduces the polarization switching under arbitrary voltage change without any fitting parameters.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors
T2 - IEICE TRANSACTIONS on Electronics
SP - 785
EP - 790
AU - Tetsuro TAMURA
AU - Yoshihiro ARIMOTO
AU - Hiroshi ISHIWARA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - A behavioral model for ferroelectric capacitors is developed. There are two requirements for the circuit simulation model; one is to reproduce the hysteretic behavior of the polarization under arbitrary voltage history, and the other is to describe the time dependence of polarization change. A parallel element model has been proposed to meet the first requirement. This model reproduces the minor loops of the hysteresis by assuming that the ferroelectric capacitor consists of the parallel capacitors of different polarization and coercive voltages. In order to add the function to describe the time dependence of the polarization change, we propose a method of measuring the switching response for individual parallel elements and the model which describes the response. In the measurement, the voltage applied to the capacitor is raised in two steps. After the first step, the voltage is kept at an intermediate level for a period of time, then raised again to the final level and the polarization change was recorded as a function of time. Because the capacitor elements with the coercive voltage lower than the intermediate level complete switching during the first step, the polarization change of the whole capacitor during the second step is attributed to the capacitor elements with the coercive voltage higher than the intermediate level. This procedure is repeated with changing the intermediate level, and the switching response of each capacitor element is obtained by taking the finite differences between the adjacent sets of data. The measurement on a sol-gel derived SrBi2Ta2O9 capacitor revealed that the switching time depended only on the difference between the applied voltage and the coercive voltage of each capacitor element. The time dependence of the polarization change is implemented to the model by inserting a nonlinear resistor in series with each capacitor, which reproduces the polarization switching under arbitrary voltage change without any fitting parameters.
ER -
English
