IEICE TRANSACTIONS on Electronics
Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs
Summary :
We have proposed the high-density triangular parallel wire channel MOSFET on an SOI substrate and demonstrated the suppressed short channel effects by simulation and experiment. In this device structure, the fabrication process is fully compatible with the planar MOSFET process and is much less complicated than other non-planer device structures including gate-all-around (GAA) and double-gate SOI MOSFETs. In addition, our fabrication process makes it possible to double the wire density resulting in the higher current drive. The three-dimensional simulation results show that the proposed triangular wire channel MOSFET has better short channel characteristics than single-gate and double-gate SOI MOSFETs. The fabricated triangular parallel wire channel MOSFETs show better subthreshold characteristics and less drain induced barrier lowering (DIBL) than the single-gate SOI MOSFETs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.5 pp.1073-1078
- Publication Date
- 2002/05/01
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
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Toshiki SAITO, Takuya SARAYA, Takashi INUKAI, Hideaki MAJIMA, Toshiharu NAGUMO, Toshiro HIRAMOTO, "Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 5, pp. 1073-1078, May 2002, doi: .
Abstract: We have proposed the high-density triangular parallel wire channel MOSFET on an SOI substrate and demonstrated the suppressed short channel effects by simulation and experiment. In this device structure, the fabrication process is fully compatible with the planar MOSFET process and is much less complicated than other non-planer device structures including gate-all-around (GAA) and double-gate SOI MOSFETs. In addition, our fabrication process makes it possible to double the wire density resulting in the higher current drive. The three-dimensional simulation results show that the proposed triangular wire channel MOSFET has better short channel characteristics than single-gate and double-gate SOI MOSFETs. The fabricated triangular parallel wire channel MOSFETs show better subthreshold characteristics and less drain induced barrier lowering (DIBL) than the single-gate SOI MOSFETs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_5_1073/_p
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@ARTICLE{e85-c_5_1073,
author={Toshiki SAITO, Takuya SARAYA, Takashi INUKAI, Hideaki MAJIMA, Toshiharu NAGUMO, Toshiro HIRAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs},
year={2002},
volume={E85-C},
number={5},
pages={1073-1078},
abstract={We have proposed the high-density triangular parallel wire channel MOSFET on an SOI substrate and demonstrated the suppressed short channel effects by simulation and experiment. In this device structure, the fabrication process is fully compatible with the planar MOSFET process and is much less complicated than other non-planer device structures including gate-all-around (GAA) and double-gate SOI MOSFETs. In addition, our fabrication process makes it possible to double the wire density resulting in the higher current drive. The three-dimensional simulation results show that the proposed triangular wire channel MOSFET has better short channel characteristics than single-gate and double-gate SOI MOSFETs. The fabricated triangular parallel wire channel MOSFETs show better subthreshold characteristics and less drain induced barrier lowering (DIBL) than the single-gate SOI MOSFETs.},
keywords={},
doi={},
ISSN={},
month={May},}
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TY - JOUR
TI - Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1073
EP - 1078
AU - Toshiki SAITO
AU - Takuya SARAYA
AU - Takashi INUKAI
AU - Hideaki MAJIMA
AU - Toshiharu NAGUMO
AU - Toshiro HIRAMOTO
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2002
AB - We have proposed the high-density triangular parallel wire channel MOSFET on an SOI substrate and demonstrated the suppressed short channel effects by simulation and experiment. In this device structure, the fabrication process is fully compatible with the planar MOSFET process and is much less complicated than other non-planer device structures including gate-all-around (GAA) and double-gate SOI MOSFETs. In addition, our fabrication process makes it possible to double the wire density resulting in the higher current drive. The three-dimensional simulation results show that the proposed triangular wire channel MOSFET has better short channel characteristics than single-gate and double-gate SOI MOSFETs. The fabricated triangular parallel wire channel MOSFETs show better subthreshold characteristics and less drain induced barrier lowering (DIBL) than the single-gate SOI MOSFETs.
ER -
English
