Ultra-Shallow Junction Formation with Antimony Implantation

Kentaro SHIBAHARA

Ultra-Shallow Junction Formation with Antimony Implantation

Kentaro SHIBAHARA

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Ultra shallow low-resistive junction formation has been investigated for sub-100-nm MOSFETs using antimony implantation. The pileup at the Si/SiO₂ interface and the resulting dopant loss during annealing is a common obstacle for antimony and arsenic to reduce junction sheet resistance. Though implanted arsenic gives rise to pileup even with a few seconds duration RTA (Rapid Thermal Annealing), antimony pileup was suppressed with the RTA at relatively low temperature, such as 800 or 900. As a result, low sheet resistance of 260 Ω/sq. was obtained for a 24 nm depth junction with antimony. These results indicate that antimony is superior to arsenic as a dopant for ultra shallow extension formation. However, increase in antimony concentration above 110²⁰ cm^-3 gives rise to precipitation and it limits the sheet resistance reduction of the antimony doped junctions. Redistribution behaviors of antimony relating to the pileup and the precipitation are discussed utilizing SIMS (Secondary Ion Mass Spectrometry) depth profiles.

Publication: IEICE TRANSACTIONS on Electronics Vol.E85-C No.5 pp.1091-1097

Publication Date: 2002/05/01

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)

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Kentaro SHIBAHARA, "Ultra-Shallow Junction Formation with Antimony Implantation" in IEICE TRANSACTIONS on Electronics, vol. E85-C, no. 5, pp. 1091-1097, May 2002, doi: .
Abstract: Ultra shallow low-resistive junction formation has been investigated for sub-100-nm MOSFETs using antimony implantation. The pileup at the Si/SiO₂ interface and the resulting dopant loss during annealing is a common obstacle for antimony and arsenic to reduce junction sheet resistance. Though implanted arsenic gives rise to pileup even with a few seconds duration RTA (Rapid Thermal Annealing), antimony pileup was suppressed with the RTA at relatively low temperature, such as 800 or 900. As a result, low sheet resistance of 260 Ω/sq. was obtained for a 24 nm depth junction with antimony. These results indicate that antimony is superior to arsenic as a dopant for ultra shallow extension formation. However, increase in antimony concentration above 110²⁰ cm^-3 gives rise to precipitation and it limits the sheet resistance reduction of the antimony doped junctions. Redistribution behaviors of antimony relating to the pileup and the precipitation are discussed utilizing SIMS (Secondary Ion Mass Spectrometry) depth profiles.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_5_1091/_p

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@ARTICLE{e85-c_5_1091,
author={Kentaro SHIBAHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultra-Shallow Junction Formation with Antimony Implantation},
year={2002},
volume={E85-C},
number={5},
pages={1091-1097},
abstract={Ultra shallow low-resistive junction formation has been investigated for sub-100-nm MOSFETs using antimony implantation. The pileup at the Si/SiO₂ interface and the resulting dopant loss during annealing is a common obstacle for antimony and arsenic to reduce junction sheet resistance. Though implanted arsenic gives rise to pileup even with a few seconds duration RTA (Rapid Thermal Annealing), antimony pileup was suppressed with the RTA at relatively low temperature, such as 800 or 900. As a result, low sheet resistance of 260 Ω/sq. was obtained for a 24 nm depth junction with antimony. These results indicate that antimony is superior to arsenic as a dopant for ultra shallow extension formation. However, increase in antimony concentration above 110²⁰ cm^-3 gives rise to precipitation and it limits the sheet resistance reduction of the antimony doped junctions. Redistribution behaviors of antimony relating to the pileup and the precipitation are discussed utilizing SIMS (Secondary Ion Mass Spectrometry) depth profiles.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - Ultra-Shallow Junction Formation with Antimony Implantation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1091
EP - 1097
AU - Kentaro SHIBAHARA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2002
AB - Ultra shallow low-resistive junction formation has been investigated for sub-100-nm MOSFETs using antimony implantation. The pileup at the Si/SiO₂ interface and the resulting dopant loss during annealing is a common obstacle for antimony and arsenic to reduce junction sheet resistance. Though implanted arsenic gives rise to pileup even with a few seconds duration RTA (Rapid Thermal Annealing), antimony pileup was suppressed with the RTA at relatively low temperature, such as 800 or 900. As a result, low sheet resistance of 260 Ω/sq. was obtained for a 24 nm depth junction with antimony. These results indicate that antimony is superior to arsenic as a dopant for ultra shallow extension formation. However, increase in antimony concentration above 110²⁰ cm^-3 gives rise to precipitation and it limits the sheet resistance reduction of the antimony doped junctions. Redistribution behaviors of antimony relating to the pileup and the precipitation are discussed utilizing SIMS (Secondary Ion Mass Spectrometry) depth profiles.
ER -