Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs
Summary :
We demonstrated the uniformity and stability as well as the high breakdown voltage of 0.1-µm-gate InP HEMTs with a double recess structure. To overcome the drawbacks regarding the uniformity and stability in the double recess structure, an InP passivation layer that functions as an etch-stopper and a surface passivator was successfully applied to the structure. It was confirmed that there was no degradation in the uniformity and stability of device performance for the double recess HEMTs that had the breakdown voltages in the on-state and off-state improved by a factor of 1.6.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2000-2003
- Publication Date
- 2003/10/01
- Publicized
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- Type of Manuscript
- Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
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Hiroto KITABAYASHI, Suehiro SUGITANI, Yoshino K. FUKAI, Yasuro YAMANE, Takatomo ENOKI, "Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 2000-2003, October 2003, doi: .
Abstract: We demonstrated the uniformity and stability as well as the high breakdown voltage of 0.1-µm-gate InP HEMTs with a double recess structure. To overcome the drawbacks regarding the uniformity and stability in the double recess structure, an InP passivation layer that functions as an etch-stopper and a surface passivator was successfully applied to the structure. It was confirmed that there was no degradation in the uniformity and stability of device performance for the double recess HEMTs that had the breakdown voltages in the on-state and off-state improved by a factor of 1.6.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2000/_p
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@ARTICLE{e86-c_10_2000,
author={Hiroto KITABAYASHI, Suehiro SUGITANI, Yoshino K. FUKAI, Yasuro YAMANE, Takatomo ENOKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs},
year={2003},
volume={E86-C},
number={10},
pages={2000-2003},
abstract={We demonstrated the uniformity and stability as well as the high breakdown voltage of 0.1-µm-gate InP HEMTs with a double recess structure. To overcome the drawbacks regarding the uniformity and stability in the double recess structure, an InP passivation layer that functions as an etch-stopper and a surface passivator was successfully applied to the structure. It was confirmed that there was no degradation in the uniformity and stability of device performance for the double recess HEMTs that had the breakdown voltages in the on-state and off-state improved by a factor of 1.6.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 2000
EP - 2003
AU - Hiroto KITABAYASHI
AU - Suehiro SUGITANI
AU - Yoshino K. FUKAI
AU - Yasuro YAMANE
AU - Takatomo ENOKI
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - We demonstrated the uniformity and stability as well as the high breakdown voltage of 0.1-µm-gate InP HEMTs with a double recess structure. To overcome the drawbacks regarding the uniformity and stability in the double recess structure, an InP passivation layer that functions as an etch-stopper and a surface passivator was successfully applied to the structure. It was confirmed that there was no degradation in the uniformity and stability of device performance for the double recess HEMTs that had the breakdown voltages in the on-state and off-state improved by a factor of 1.6.
ER -
English
