IEICE TRANSACTIONS on Electronics
AlGaN/GaN HEMT X-Band Frequency Doublers with Novel Fundamental Frequency Reflector Scheme
Summary :
The first implementations of X-band AlGaN/GaN HEMT single-ended frequency doublers are presented in this paper. Two types of fundamental frequency signal reflector schemes have been demonstrated for the frequency doubler application. Open-circuited quarter-wavelength microstrip line at the fundamental frequency is utilized for the reflector in a conventional way. In the other architecture a printed antenna is employed as a radiator as well as a novel fundamental frequency reflector. A microstrip rectangular patch antenna operating at the second harmonic frequency of the doubler was designed and integrated with AlGaN/GaN HEMT based on active integrated antenna design concept. Using AlGaN/GaN HEMT with 1 mm gate periphery, two 4 to 8 GHz frequency doublers were designed by the described design methodologies, fabricated, and tested. For the conventional frequency doubler, a conversion gain of 0.6 dB and with an output power of 15 dBm was observed. A conversion gain of 5 dB and an output power of 25 dBm with embedded antenna gain were achieved at a drain voltage of 12 V for the doubler integrated with the patch antenna.
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- IEICE TRANSACTIONS on Electronics Vol.E86-C No.8 pp.1416-1421
- Publication Date
- 2003/08/01
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- Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
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Younkyu CHUNG, Kevin M.K.H. LEONG, Tatsuo ITOH, "AlGaN/GaN HEMT X-Band Frequency Doublers with Novel Fundamental Frequency Reflector Scheme" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 8, pp. 1416-1421, August 2003, doi: .
Abstract: The first implementations of X-band AlGaN/GaN HEMT single-ended frequency doublers are presented in this paper. Two types of fundamental frequency signal reflector schemes have been demonstrated for the frequency doubler application. Open-circuited quarter-wavelength microstrip line at the fundamental frequency is utilized for the reflector in a conventional way. In the other architecture a printed antenna is employed as a radiator as well as a novel fundamental frequency reflector. A microstrip rectangular patch antenna operating at the second harmonic frequency of the doubler was designed and integrated with AlGaN/GaN HEMT based on active integrated antenna design concept. Using AlGaN/GaN HEMT with 1 mm gate periphery, two 4 to 8 GHz frequency doublers were designed by the described design methodologies, fabricated, and tested. For the conventional frequency doubler, a conversion gain of 0.6 dB and with an output power of 15 dBm was observed. A conversion gain of 5 dB and an output power of 25 dBm with embedded antenna gain were achieved at a drain voltage of 12 V for the doubler integrated with the patch antenna.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_8_1416/_p
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@ARTICLE{e86-c_8_1416,
author={Younkyu CHUNG, Kevin M.K.H. LEONG, Tatsuo ITOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={AlGaN/GaN HEMT X-Band Frequency Doublers with Novel Fundamental Frequency Reflector Scheme},
year={2003},
volume={E86-C},
number={8},
pages={1416-1421},
abstract={The first implementations of X-band AlGaN/GaN HEMT single-ended frequency doublers are presented in this paper. Two types of fundamental frequency signal reflector schemes have been demonstrated for the frequency doubler application. Open-circuited quarter-wavelength microstrip line at the fundamental frequency is utilized for the reflector in a conventional way. In the other architecture a printed antenna is employed as a radiator as well as a novel fundamental frequency reflector. A microstrip rectangular patch antenna operating at the second harmonic frequency of the doubler was designed and integrated with AlGaN/GaN HEMT based on active integrated antenna design concept. Using AlGaN/GaN HEMT with 1 mm gate periphery, two 4 to 8 GHz frequency doublers were designed by the described design methodologies, fabricated, and tested. For the conventional frequency doubler, a conversion gain of 0.6 dB and with an output power of 15 dBm was observed. A conversion gain of 5 dB and an output power of 25 dBm with embedded antenna gain were achieved at a drain voltage of 12 V for the doubler integrated with the patch antenna.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - AlGaN/GaN HEMT X-Band Frequency Doublers with Novel Fundamental Frequency Reflector Scheme
T2 - IEICE TRANSACTIONS on Electronics
SP - 1416
EP - 1421
AU - Younkyu CHUNG
AU - Kevin M.K.H. LEONG
AU - Tatsuo ITOH
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2003
AB - The first implementations of X-band AlGaN/GaN HEMT single-ended frequency doublers are presented in this paper. Two types of fundamental frequency signal reflector schemes have been demonstrated for the frequency doubler application. Open-circuited quarter-wavelength microstrip line at the fundamental frequency is utilized for the reflector in a conventional way. In the other architecture a printed antenna is employed as a radiator as well as a novel fundamental frequency reflector. A microstrip rectangular patch antenna operating at the second harmonic frequency of the doubler was designed and integrated with AlGaN/GaN HEMT based on active integrated antenna design concept. Using AlGaN/GaN HEMT with 1 mm gate periphery, two 4 to 8 GHz frequency doublers were designed by the described design methodologies, fabricated, and tested. For the conventional frequency doubler, a conversion gain of 0.6 dB and with an output power of 15 dBm was observed. A conversion gain of 5 dB and an output power of 25 dBm with embedded antenna gain were achieved at a drain voltage of 12 V for the doubler integrated with the patch antenna.
ER -
English
