Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100)

Shun-ichiro OHMI; Go YAMANAKA; Tetsushi SAKAI

Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100)

Shun-ichiro OHMI, Go YAMANAKA, Tetsushi SAKAI

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Electron cyclotron resonance (ECR) plasma oxidation of AlN thin films was studied to form the AlON high-κ gate insulator. The leakage current was found to be decreased, and also the surface roughness was improved with the ECR plasma oxidation of AlN thin films. The leakage current was further decreased after 1000 RTA in N₂ with little increase of equivalent oxide thickness (EOT) because of the high quality interfacial layer formation.

Publication: IEICE TRANSACTIONS on Electronics Vol.E87-C No.1 pp.24-29

Publication Date: 2004/01/01

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Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics)

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Shun-ichiro OHMI, Go YAMANAKA, Tetsushi SAKAI, "Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100)" in IEICE TRANSACTIONS on Electronics, vol. E87-C, no. 1, pp. 24-29, January 2004, doi: .
Abstract: Electron cyclotron resonance (ECR) plasma oxidation of AlN thin films was studied to form the AlON high-κ gate insulator. The leakage current was found to be decreased, and also the surface roughness was improved with the ECR plasma oxidation of AlN thin films. The leakage current was further decreased after 1000 RTA in N₂ with little increase of equivalent oxide thickness (EOT) because of the high quality interfacial layer formation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_1_24/_p

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@ARTICLE{e87-c_1_24,
author={Shun-ichiro OHMI, Go YAMANAKA, Tetsushi SAKAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100)},
year={2004},
volume={E87-C},
number={1},
pages={24-29},
abstract={Electron cyclotron resonance (ECR) plasma oxidation of AlN thin films was studied to form the AlON high-κ gate insulator. The leakage current was found to be decreased, and also the surface roughness was improved with the ECR plasma oxidation of AlN thin films. The leakage current was further decreased after 1000 RTA in N₂ with little increase of equivalent oxide thickness (EOT) because of the high quality interfacial layer formation.},
keywords={},
doi={},
ISSN={},
month={January},}

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TY - JOUR
TI - Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100)
T2 - IEICE TRANSACTIONS on Electronics
SP - 24
EP - 29
AU - Shun-ichiro OHMI
AU - Go YAMANAKA
AU - Tetsushi SAKAI
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2004
AB - Electron cyclotron resonance (ECR) plasma oxidation of AlN thin films was studied to form the AlON high-κ gate insulator. The leakage current was found to be decreased, and also the surface roughness was improved with the ECR plasma oxidation of AlN thin films. The leakage current was further decreased after 1000 RTA in N₂ with little increase of equivalent oxide thickness (EOT) because of the high quality interfacial layer formation.
ER -