Electrical Properties of SiN/HfO2/SiON Gate Stacks with High Thermal Stability
Summary :
The characteristics of HfO2 gate stacks, which consisted of the SiN layer deposited between the HfO2 and poly-Si gate electrode and the SiON interfacial layer were investigated. The SiN layer played important role to reduce the leakage current caused by the defect of the crystallized HfO2. The SiN layer was also effective to achieve the prevention of the interfacial reaction, the suppression of dopant penetration. Furthermore, that stack structure indicated excellent TDDB reliability fabricated by conventional high temperature processes.
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- IEICE TRANSACTIONS on Electronics Vol.E87-C No.1 pp.37-43
- Publication Date
- 2004/01/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on High-κ Gate Dielectrics)
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Yusuke MORISAKI, Takayuki AOYAMA, Yoshihiro SUGITA, Kiyoshi IRINO, Toshihiro SUGII, Tomoji NAKAMURA, "Electrical Properties of SiN/HfO2/SiON Gate Stacks with High Thermal Stability" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 1, pp. 37-43, January 2004, doi: .
Abstract: The characteristics of HfO2 gate stacks, which consisted of the SiN layer deposited between the HfO2 and poly-Si gate electrode and the SiON interfacial layer were investigated. The SiN layer played important role to reduce the leakage current caused by the defect of the crystallized HfO2. The SiN layer was also effective to achieve the prevention of the interfacial reaction, the suppression of dopant penetration. Furthermore, that stack structure indicated excellent TDDB reliability fabricated by conventional high temperature processes.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_1_37/_p
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@ARTICLE{e87-c_1_37,
author={Yusuke MORISAKI, Takayuki AOYAMA, Yoshihiro SUGITA, Kiyoshi IRINO, Toshihiro SUGII, Tomoji NAKAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical Properties of SiN/HfO2/SiON Gate Stacks with High Thermal Stability},
year={2004},
volume={E87-C},
number={1},
pages={37-43},
abstract={The characteristics of HfO2 gate stacks, which consisted of the SiN layer deposited between the HfO2 and poly-Si gate electrode and the SiON interfacial layer were investigated. The SiN layer played important role to reduce the leakage current caused by the defect of the crystallized HfO2. The SiN layer was also effective to achieve the prevention of the interfacial reaction, the suppression of dopant penetration. Furthermore, that stack structure indicated excellent TDDB reliability fabricated by conventional high temperature processes.},
keywords={},
doi={},
ISSN={},
month={January},}
Copy
TY - JOUR
TI - Electrical Properties of SiN/HfO2/SiON Gate Stacks with High Thermal Stability
T2 - IEICE TRANSACTIONS on Electronics
SP - 37
EP - 43
AU - Yusuke MORISAKI
AU - Takayuki AOYAMA
AU - Yoshihiro SUGITA
AU - Kiyoshi IRINO
AU - Toshihiro SUGII
AU - Tomoji NAKAMURA
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2004
AB - The characteristics of HfO2 gate stacks, which consisted of the SiN layer deposited between the HfO2 and poly-Si gate electrode and the SiON interfacial layer were investigated. The SiN layer played important role to reduce the leakage current caused by the defect of the crystallized HfO2. The SiN layer was also effective to achieve the prevention of the interfacial reaction, the suppression of dopant penetration. Furthermore, that stack structure indicated excellent TDDB reliability fabricated by conventional high temperature processes.
ER -
English
