Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System

Takakuni DOUSEKI; Masashi YONEMARU; Eiji IKUTA; Akira MATSUZAWA; Atsushi KAMEYAMA; Shunsuke BABA; Tohru MOGAMI; Hakaru KYURAGI

Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System

Takakuni DOUSEKI, Masashi YONEMARU, Eiji IKUTA, Akira MATSUZAWA, Atsushi KAMEYAMA, Shunsuke BABA, Tohru MOGAMI, Hakaru KYURAGI

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This paper describes an ultralow-power multi-threshold (MT) CMOS/SOI circuit technique that mainly uses fully-depleted MOSFETs. The MTCMOS/SOI circuit, which combines fully-depleted low- and medium-Vth CMOS/SOI logic gates and high-Vth power-switch transistors, makes it possible to lower the supply voltage to 0.5 V and reduce the power dissipation of LSIs to the 1-mW level. We overview some MTCMOS/SOI digital and analog components, such as a CPU, memory, analog/RF circuit and DC-DC converter for an ultralow-power mobile system. The validity of the ultralow-voltage MTCMOS/SOI circuits is confirmed by the demonstration of a self-powered 300-MHz-band short-range wireless system. A 1-V SAW oscillator and a switched-capacitor-type DC-DC converter in the transmitter makes possible self-powered transmission by the heat from a hand. In the receiver, a 0.5-V digital controller composed of a 8-bit CPU, 256-kbit SRAM, and ROM also make self-powered operation under illumination possible.

Publication: IEICE TRANSACTIONS on Electronics Vol.E87-C No.4 pp.437-447

Publication Date: 2004/04/01

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Type of Manuscript: Special Section INVITED PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)

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Takakuni DOUSEKI, Masashi YONEMARU, Eiji IKUTA, Akira MATSUZAWA, Atsushi KAMEYAMA, Shunsuke BABA, Tohru MOGAMI, Hakaru KYURAGI, "Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System" in IEICE TRANSACTIONS on Electronics, vol. E87-C, no. 4, pp. 437-447, April 2004, doi: .
Abstract: This paper describes an ultralow-power multi-threshold (MT) CMOS/SOI circuit technique that mainly uses fully-depleted MOSFETs. The MTCMOS/SOI circuit, which combines fully-depleted low- and medium-Vth CMOS/SOI logic gates and high-Vth power-switch transistors, makes it possible to lower the supply voltage to 0.5 V and reduce the power dissipation of LSIs to the 1-mW level. We overview some MTCMOS/SOI digital and analog components, such as a CPU, memory, analog/RF circuit and DC-DC converter for an ultralow-power mobile system. The validity of the ultralow-voltage MTCMOS/SOI circuits is confirmed by the demonstration of a self-powered 300-MHz-band short-range wireless system. A 1-V SAW oscillator and a switched-capacitor-type DC-DC converter in the transmitter makes possible self-powered transmission by the heat from a hand. In the receiver, a 0.5-V digital controller composed of a 8-bit CPU, 256-kbit SRAM, and ROM also make self-powered operation under illumination possible.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_4_437/_p

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@ARTICLE{e87-c_4_437,
author={Takakuni DOUSEKI, Masashi YONEMARU, Eiji IKUTA, Akira MATSUZAWA, Atsushi KAMEYAMA, Shunsuke BABA, Tohru MOGAMI, Hakaru KYURAGI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System},
year={2004},
volume={E87-C},
number={4},
pages={437-447},
abstract={This paper describes an ultralow-power multi-threshold (MT) CMOS/SOI circuit technique that mainly uses fully-depleted MOSFETs. The MTCMOS/SOI circuit, which combines fully-depleted low- and medium-Vth CMOS/SOI logic gates and high-Vth power-switch transistors, makes it possible to lower the supply voltage to 0.5 V and reduce the power dissipation of LSIs to the 1-mW level. We overview some MTCMOS/SOI digital and analog components, such as a CPU, memory, analog/RF circuit and DC-DC converter for an ultralow-power mobile system. The validity of the ultralow-voltage MTCMOS/SOI circuits is confirmed by the demonstration of a self-powered 300-MHz-band short-range wireless system. A 1-V SAW oscillator and a switched-capacitor-type DC-DC converter in the transmitter makes possible self-powered transmission by the heat from a hand. In the receiver, a 0.5-V digital controller composed of a 8-bit CPU, 256-kbit SRAM, and ROM also make self-powered operation under illumination possible.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System
T2 - IEICE TRANSACTIONS on Electronics
SP - 437
EP - 447
AU - Takakuni DOUSEKI
AU - Masashi YONEMARU
AU - Eiji IKUTA
AU - Akira MATSUZAWA
AU - Atsushi KAMEYAMA
AU - Shunsuke BABA
AU - Tohru MOGAMI
AU - Hakaru KYURAGI
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2004
AB - This paper describes an ultralow-power multi-threshold (MT) CMOS/SOI circuit technique that mainly uses fully-depleted MOSFETs. The MTCMOS/SOI circuit, which combines fully-depleted low- and medium-Vth CMOS/SOI logic gates and high-Vth power-switch transistors, makes it possible to lower the supply voltage to 0.5 V and reduce the power dissipation of LSIs to the 1-mW level. We overview some MTCMOS/SOI digital and analog components, such as a CPU, memory, analog/RF circuit and DC-DC converter for an ultralow-power mobile system. The validity of the ultralow-voltage MTCMOS/SOI circuits is confirmed by the demonstration of a self-powered 300-MHz-band short-range wireless system. A 1-V SAW oscillator and a switched-capacitor-type DC-DC converter in the transmitter makes possible self-powered transmission by the heat from a hand. In the receiver, a 0.5-V digital controller composed of a 8-bit CPU, 256-kbit SRAM, and ROM also make self-powered operation under illumination possible.
ER -