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Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer

Yasuyuki MIYAMOTO, Takahiro GOTOW

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Summary :

In this study, simulations are performed to design an optimal device for thinning the GaN channel layer on the semi-insulating layer in HEMT. When the gate length is 50nm, the thickness of the undoped channel must be thinner than 300nm to observe the off state. When the GaN channel layer is an Fe-doped, an on/off ratio of ~300 can be achieved even with a gate length of 25nm, although the transconductance is slightly reduced.

Publication
IEICE TRANSACTIONS on Electronics Vol.E103-C No.6 pp.304-307
Publication Date
2020/06/01
Publicized
Online ISSN
1745-1353
DOI
10.1587/transele.2019FUS0002
Type of Manuscript
BRIEF PAPER
Category
Semiconductor Materials and Devices

Authors

Yasuyuki MIYAMOTO
  Tokyo Institute of Technology,Nagoya University
Takahiro GOTOW
  Tokyo Institute of Technology

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