IEICE TRANSACTIONS on Electronics
Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer
Summary :
In this study, simulations are performed to design an optimal device for thinning the GaN channel layer on the semi-insulating layer in HEMT. When the gate length is 50nm, the thickness of the undoped channel must be thinner than 300nm to observe the off state. When the GaN channel layer is an Fe-doped, an on/off ratio of ~300 can be achieved even with a gate length of 25nm, although the transconductance is slightly reduced.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E103-C No.6 pp.304-307
- Publication Date
- 2020/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2019FUS0002
- Type of Manuscript
- BRIEF PAPER
- Category
- Semiconductor Materials and Devices
Authors
Yasuyuki MIYAMOTO
Tokyo Institute of Technology,Nagoya University
Takahiro GOTOW
Tokyo Institute of Technology
Keyword
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Yasuyuki MIYAMOTO, Takahiro GOTOW, "Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 6, pp. 304-307, June 2020, doi: 10.1587/transele.2019FUS0002.
Abstract: In this study, simulations are performed to design an optimal device for thinning the GaN channel layer on the semi-insulating layer in HEMT. When the gate length is 50nm, the thickness of the undoped channel must be thinner than 300nm to observe the off state. When the GaN channel layer is an Fe-doped, an on/off ratio of ~300 can be achieved even with a gate length of 25nm, although the transconductance is slightly reduced.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019FUS0002/_p
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@ARTICLE{e103-c_6_304,
author={Yasuyuki MIYAMOTO, Takahiro GOTOW, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer},
year={2020},
volume={E103-C},
number={6},
pages={304-307},
abstract={In this study, simulations are performed to design an optimal device for thinning the GaN channel layer on the semi-insulating layer in HEMT. When the gate length is 50nm, the thickness of the undoped channel must be thinner than 300nm to observe the off state. When the GaN channel layer is an Fe-doped, an on/off ratio of ~300 can be achieved even with a gate length of 25nm, although the transconductance is slightly reduced.},
keywords={},
doi={10.1587/transele.2019FUS0002},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 304
EP - 307
AU - Yasuyuki MIYAMOTO
AU - Takahiro GOTOW
PY - 2020
DO - 10.1587/transele.2019FUS0002
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2020
AB - In this study, simulations are performed to design an optimal device for thinning the GaN channel layer on the semi-insulating layer in HEMT. When the gate length is 50nm, the thickness of the undoped channel must be thinner than 300nm to observe the off state. When the GaN channel layer is an Fe-doped, an on/off ratio of ~300 can be achieved even with a gate length of 25nm, although the transconductance is slightly reduced.
ER -
English
