IEICE TRANSACTIONS on Electronics
Time-Resolved Observation of Organic Light Emitting Diode under Reverse Bias Voltage by Extended Time Domain Reflectometry
Summary :
We observed dynamical carrier motion in an OLED device under an external reverse bias application using ExTDR measurement. The rectangular wave pulses were used in our ExTDR to observe the transient impedance of the OLED sample. The falling edge of the transmission waveform reflects the transient impedance after applying pulse voltage during the pulse width. The observed pulse width variation at the falling edge waveform indicates that the frontline of the hole distribution in the hole transport layer was forced to move backward to the ITO electrode.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E106-C No.6 pp.236-239
- Publication Date
- 2023/06/01
- Publicized
- 2022/10/26
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2022OMS0011
- Type of Manuscript
- BRIEF PAPER
- Category
Authors
Weisong LIAO
Chiba University
Akira KAINO
Chiba University
Tomoaki MASHIKO
Chiba University
Sou KUROMASA
Chiba University
Masatoshi SAKAI
Chiba University
Kazuhiro KUDO
Chiba University
Keyword
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Weisong LIAO, Akira KAINO, Tomoaki MASHIKO, Sou KUROMASA, Masatoshi SAKAI, Kazuhiro KUDO, "Time-Resolved Observation of Organic Light Emitting Diode under Reverse Bias Voltage by Extended Time Domain Reflectometry" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 6, pp. 236-239, June 2023, doi: 10.1587/transele.2022OMS0011.
Abstract: We observed dynamical carrier motion in an OLED device under an external reverse bias application using ExTDR measurement. The rectangular wave pulses were used in our ExTDR to observe the transient impedance of the OLED sample. The falling edge of the transmission waveform reflects the transient impedance after applying pulse voltage during the pulse width. The observed pulse width variation at the falling edge waveform indicates that the frontline of the hole distribution in the hole transport layer was forced to move backward to the ITO electrode.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022OMS0011/_p
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@ARTICLE{e106-c_6_236,
author={Weisong LIAO, Akira KAINO, Tomoaki MASHIKO, Sou KUROMASA, Masatoshi SAKAI, Kazuhiro KUDO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Time-Resolved Observation of Organic Light Emitting Diode under Reverse Bias Voltage by Extended Time Domain Reflectometry},
year={2023},
volume={E106-C},
number={6},
pages={236-239},
abstract={We observed dynamical carrier motion in an OLED device under an external reverse bias application using ExTDR measurement. The rectangular wave pulses were used in our ExTDR to observe the transient impedance of the OLED sample. The falling edge of the transmission waveform reflects the transient impedance after applying pulse voltage during the pulse width. The observed pulse width variation at the falling edge waveform indicates that the frontline of the hole distribution in the hole transport layer was forced to move backward to the ITO electrode.},
keywords={},
doi={10.1587/transele.2022OMS0011},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - Time-Resolved Observation of Organic Light Emitting Diode under Reverse Bias Voltage by Extended Time Domain Reflectometry
T2 - IEICE TRANSACTIONS on Electronics
SP - 236
EP - 239
AU - Weisong LIAO
AU - Akira KAINO
AU - Tomoaki MASHIKO
AU - Sou KUROMASA
AU - Masatoshi SAKAI
AU - Kazuhiro KUDO
PY - 2023
DO - 10.1587/transele.2022OMS0011
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2023
AB - We observed dynamical carrier motion in an OLED device under an external reverse bias application using ExTDR measurement. The rectangular wave pulses were used in our ExTDR to observe the transient impedance of the OLED sample. The falling edge of the transmission waveform reflects the transient impedance after applying pulse voltage during the pulse width. The observed pulse width variation at the falling edge waveform indicates that the frontline of the hole distribution in the hole transport layer was forced to move backward to the ITO electrode.
ER -
English
