We observed dynamical carrier motion in an OLED device under an external reverse bias application using ExTDR measurement. The rectangular wave pulses were used in our ExTDR to observe the transient impedance of the OLED sample. The falling edge of the transmission waveform reflects the transient impedance after applying pulse voltage during the pulse width. The observed pulse width variation at the falling edge waveform indicates that the frontline of the hole distribution in the hole transport layer was forced to move backward to the ITO electrode.

We analyze the carrier dynamics in MOSFETs under low-voltage operation. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically for a 90 nm CMOS technology. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering the carrier-transit delay in the compact MOSFET model. Long carrier transit delay under the low voltage switching-on operation results in long duration of the displacement current flow. On the other hand, the switching-off characteristics are independent of the bias condition.

We describe the characteristics of all-optical switching schemes based on semiconductor optical amplifiers (SOAs), with particular emphasis on the role of the fast carrier dynamics. The SOA response to a single short pulse as well as to a data-modulated pulse train is investigated and the properties of schemes relying on cross-gain as well as cross-phase modulation are discussed. The possible benefits of using SOAs with quantum dot active regions are theoretically analyzed. The bandfilling characteristics and the presence of fast capture processes may allow to reach bitrates in excess of 100 Gb/s even for simple cross-gain modulation schemes.