We observed dynamical carrier motion in an OLED device under an external reverse bias application using ExTDR measurement. The rectangular wave pulses were used in our ExTDR to observe the transient impedance of the OLED sample. The falling edge of the transmission waveform reflects the transient impedance after applying pulse voltage during the pulse width. The observed pulse width variation at the falling edge waveform indicates that the frontline of the hole distribution in the hole transport layer was forced to move backward to the ITO electrode.

We have developed multilayered polymer-based inverted organic light emitting diodes (iOLED) using transfer-printing and push-coating techniques. We obtained the higher efficiency and lower operation voltage with push-coated blue light emitting polymer and hole transporting polymer than the devices with spin-coated film. The β-phase obtained for blue emitting layer is attributable to the improved performance of relatively efficient bule and white iOLEDs with an external quantum efficiency (EQE) of above 2%.

Optical phase conjugation (OPC) is an all-optical signal processing technique for mitigating fiber nonlinearity and is promising for building cost-efficient fiber networks with few optic-electric-optic conversions and long amplification spacing. In lumped amplified systems, OPC has a little nonlinearity mitigation efficiency for nonlinear distortion induced by cross-phase modulation (XPM) due to the asymmetry of power and chromatic dispersion (CD) maps during propagation in transmission fiber. In addition, the walk-off of XPM-induced noise becomes small due to the CD compensation effect of OPC, so the deterministic nonlinear distortion increases. Therefore, lumped amplified transmission systems with OPC are more sensitive to channel spacing than conventional systems. In this paper, we show the channel spacing dependence of NZ-DSF transmission using amplification repeater with OPC. Numerical simulations show comprehensive characteristics between channel spacing and CD in a 100-Gbps/λ WDM signal. An experimental verification using periodically poled LiNbO3-based OPC is also performed. These results suggest that channel spacing design is more important in OPC-assisted systems than in conventional dispersion-unmanaged systems.

Focusing on the planar slab structure of OLEDs, it is found the threshold value of the in-plane wave number at which the spectrum component of the electromagnetic field at the outermost boundary is divided into a radiation mode and a guided (confined) mode. This is equivalent to the total reflection condition in the ray optics. The spectral integral of the Poynting power was calculated from the boundary values of the electromagnetic fields in each. Both become average power and reactive power respectively, and the sum of them becomes the total volt-amperes from the light emitting dipole. Therefore, the ratio of average power to this total is the power factor that can be a quantitative index of light extraction.

We evaluated the noise properties of a periodically poled lithium niobite phase-sensitive amplifier (PSA) using a phase-locked local oscillator as a pump generated by an optical phase-locked loop (OPLL-LO). To examine whether or not the LO pump generated by an OPLL degrades the noise figure (NF) of the PSA, we compared the noise levels of a PSA using an OPLL-LO with that of one using a master local oscillator (M-LO) that utilizes the master light itself as a pump in the electrical domain. With the OPLL, the phase-locked local light had almost the same frequency noise components as the master light. We observed almost the same output noise spectra for the OPLL-LO PSA and M-LO PSA and confirmed the absence of excess noise components in the OPLL-LO PSA in the 0.1 to 20-GHz range. The OPLL-LO PSA exhibited low-noise amplification with an average NF of 1.7-dB at a 23.2-dB gain within an input power range of -31 to -21dBm, which is a feasible input power for repeater amplifiers used in the optical signal transmission systems. We also investigated the influence of the noisy master light, which emulates the accumulation of optical noise from the amplifiers in the transmission system. The OPLL-LO PSA was highly tolerant to the optical noise because the difference in the NF was negligibly small within a master light OSNR range of 5 to 55dB. These results indicate that the OPLL-LO PSA will be useful as a low-noise repeater amplifier for the spectrally efficient large-capacity photonic networks of the future.

We developed a polarization-independent and reserved-band-less complementary spectral inverted optical phase conjugation (CSI-OPC) device using dual-band difference frequency generation based on highly efficient periodically poled LiNbO3 waveguide technologies. To examine the nonlinearity mitigation in a long-haul transmission using a large number of OPCs, we installed a CSI-OPC device in the middle of a pure silica core fiber-based recirculating loop transmission line with a length of 320km. First, we examined the fiber-input power tolerance after 5,120-km and 6,400-km transmission using 22.5-Gbaud PDM-16QAM 10-channel DWDM signals and found a Q-factor improvement of over 1.3dB along with enhanced power tolerance thanks to mitigating the fiber nonlinearity. We then demonstrated transmission distance extension using the CSI-OPC device. The use of multiple CSI-OPCs enables an obvious performance improvements attained by extending the transmission distance from 6,400km to 8,960km, which corresponds to applying the CSI-OPC device 28 times. Moreover, there was no Q-factor degradation for the link in a linear regime after applying the CSI-OPC device more than 16 times. These results demonstrate that the CSI-OPC device can improve the nonlinear tolerance of PDM-16QAM signals without an excess penalty.

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by an advanced self-aligned imprint lithography (ASAIL) method with a hybrid etching process. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The hybrid etching process was newly applied in the original SAIL process for the purpose of reducing plasma damage of a-IGZO channel layer during plasma etching in the ASAIL process. This research demonstrated that the a-IGZO TFT could be successfully fabricated by the ASAIL process. In particular, the hybrid etching process applied in this paper can be utilized for the back-channel-etch type a-IGZO TFT and further extended for the roll-to-roll backplane process.

Novel roll-to-roll (R2R) deposition and patterning of ITO on ultra-thin glass were developed with no photolithography and applied to flexible organic light emitting diodes (OLEDs). The developed deposition consists of low temperature sputtering and annealing. The developed patterning utilizes an etching paste printed by novel R2R screen printing.

With the appearance of large OLED panels, the OLED TV industry has experienced significant growth. However, this technology is still in the early stages of commercialization, and some technical challenges remain to be overcome. During the development phase of a product, power consumption is one of the most important considerations. To reduce power consumption in OLED displays, we propose a method based on just-noticeable difference (JND). JND refers to the minimum visibility threshold when visual content is altered and results from physiological and psychophysical phenomena in the human visual system (HVS). A JND model suitable for OLED displays is derived from numerous experiments with OLED displays. With the use of JND, it is possible to reduce power consumption while minimizing perceptual image quality degradation.

We propose a highly sensitive carrier-recovery system for in-line amplification for binary phase shift keying (BPSK) signals in a periodically poled LiNbO3 based phase sensitive amplifier (PSA). We applied a discrete two-stage second harmonic generation/difference frequency generation (SHG/DFG) parametric conversion scheme to enhance the sensitivity of the carrier recovery. Owing to this two-stage SHG/DFG scheme, the conversion efficiency of the seed light for the injection locking needed for the pump generation can be improved compared to that of the cascaded SHG/DFG scheme. The new discrete scheme might also prevent the SNR degradation of the seed light caused by the ASE from the booster EDFA compared with the previous system that used the cascaded scheme. This novel carrier-recovery system exhibits high sensitivity with the SNR of over 7.8dB of the seed light, while tapped signal power is as low as -50dBm, which is low enough for injection locking. The new in-line PSA with this carrier-recovery system exhibits high gain of over 11dB. Since we successfully obtained the high gain property, we tried multistage amplification taking into account practical use and achieved it with both a high gain of 20dB and a noise figure that is almost as low as the standard quantum limit of a PSA.

Up to now, broadband THz time-domain system has been developed and widely used for THz inspection system; however for many THz devices for THz band wireless communication, narrow-band system would be preferred rather than typical broadband system. In this work we established a narrowband and time-domain THz radiation and detection system and characterized uncooled microbolometer-based THz imagers using that system. The central frequency of generated narrowband THz wave was 850 GHz. This system enables simultaneous measurement of pulse energy and waveform of THz pulse using a superconducting transition edge sensor for measuring energy and electro-optic sampling for measuring THz waveform. We used this system to evaluate the performance of uncooled THz imagers; IRV-T0831 and T0832 from NEC. Noise equivalent power (NEP) of approximately 0.22 pW/Hz1/2 was achieved in case of T0832 at less than 1 THz which is lower than NEP value of previous reports.

In all-optical switches using the cascade of second harmonic generation and difference frequency mixing in periodically poled lithium niobate (PPLN) waveguide devices, walk-off between the fundamental and second harmonic pulses causes crosstalk between neighboring symbols, and limits the switching performance. In this paper, we numerically study retiming characteristics of all-optical switches that employ the PPLN waveguide devices with consideration for the effects of the crosstalk and for the input timing of the data and clock pulses. We find that the time offset between the data and clock pulses can control the timing jitter of the switched output; an appropriate offset can reduce the jitter while improving the switching efficiency.

A highly efficient sky-blue organic light-emitting diode (OLED) based on a thermally-activated delayed fluorescence (TADF) molecule, 1,2-bis(carbazol-9-yl)-4,5-dicyanobenzene (2CzPN), was studied. The sky-blue OLED exhibited a maximum external electroluminescence quantum efficiency (ηEQE) of over 24.0%. In addition, a white OLED using 2CzPN combined with green and orange TADF emitters showed a high ηEQE of 17.3% with a maximum power efficiency of 52.3 lm/W and Commission Internationale de l'Eclairage coordinates of (0.32, 0.43).

This paper presents 2-(hydroxyl) quinoline lithium (Liq) used as an n-type dopant to improve white hybrid organic light-emitting diode (WHOLEDs) performance. The Liq doped tris(8-hydroxyquinolinato) aluminum (Alq$_{3})$ layer possessed enhanced electron injection, efficient hole and electron balance in the emitting layer, as one of the most essential issues for device applications. This work investigates the optimum recipe (Liq concentration and thickness) of Alq$_{3}$:Liq n-type doped electron injection layer (EIL) for WHOLED devices by comparing the current density and efficiency results with conventional Alq$_{3}$/LiF technique. A blocking layer or interlayer is inserted between emitting layer and EIL to avoid excitons quenched. In this work suitable material and optimum thickness for blocking layer are studied, a white small-molecular organic light-emitting diode (SM-OLEDs) based on a 1,3,5-tris (N-phenylbenzimidazol-2-yl) benzene (TPBi) stamping transfer process is investigated. The proposed stamping transfer process can avoid the complexity of the vacuum deposition process.

This paper presents an experimental investigation on the RF characteristics of a 3W-class cryogenically-cooled receiver amplifier employing a gallium-nitride high electron mobility transistor (GaN HEMT) with a blue light for mobile base stations. In general, a cryogenically-cooled receiver amplifier using a GaN HEMT exhibits unstable DC characteristics similar to those found in the current collapse phenomenon because the GaN HEMT loses thermal energy at cryogenic temperatures. The fabricated cryogenically-cooled receiver amplifier achieves stable DC characteristics by injecting blue light into the GaN HEMT instead of thermal energy. Experimental results show that the amplifier achieves fine stable DC characteristics for deviation in the drain-source current from 42% to 5% and RF characteristics for a maximum power added efficiency from 58% to 68% without and with the blue light at 60,K. The fabricated amplifier is effective in reducing the power consumption at cryogenic temperatures. To the best of our knowledge, this paper is the first report regarding RF characteristics of a cryogenically-cooled receiver amplifier using a blue light for mobile base stations.

A self-assembled monolayer having a benzophenone unit as a photoreactive terminal group (BP-SAM) was prepared on an indium-tin oxide (ITO) electrode, on which a hole-transport layer of a phenoxazine-dioctylfluorene copolymer (H5) was spin-coated and irradiated with UV light. After washing the physisorbed H5 molecules, contact angle measurement and ellipsometry showed that the H5 molecules can be tethered to the ITO surface via the BP-SAM. Organic light-emitting diodes (OLEDs) were prepared in the structure of ITO/H5 hole transport layer/tris(8-hydroxyquinolato) aluminum/bathocuproin/LiF/Al electrode with and without the BP-SAM layer on the surface of ITO. The device with the BP-SAM showed higher current density and higher luminance due to the improvement of contact at the ITO/H5 interface by forming covalent bonds via the BP-SAM.

A numerical model of multi-layered organic light emitting diode (OLED) is presented in this paper. The current density-voltage (J-V) model for OLED was performed by using the injection-limited current and bulk-limited current. The mobility equation was based on the field dependent model, so called “Poole-Frenkel mobility model.” The accuracy of this simulation was represented by comparing to the experimental results with a variable of EML thickness of multi-layered OLED device. There are two hetero-junction models which should be dealt with in the simulation. The Langevin recombination rate of electron and hole is also calculated through the device simulation.

We present the theory and experiment of metal-cavity nanolasers and nanoLEDs flip-chip bonded to silicon under electrical injection at room temperature. We first review the recent progress on micro- and nanolasers. We then present the design rule and our theoretical model. We show the experimental results of our metal-cavity surface-emitting microlasers and compare with our theoretical results showing an excellent agreement. We found the important contributions of the nonradiative recombination currents including Auger recombination, surface recombination, and leakage currents. Finally, experimental demonstration of electrical injection nanoLEDs toward subwavelength nanoscale lasers is reported.

Effect of an addition of a cooled step-up transformer to a flux locked loop (FLL) circuit was studied to reduce indirect rf interference to HTS-dc-SQUID. First, we demonstrated that a noise level of an HTS-dc-SQUID system using the FLL circuit with single room-temperature transformer could be easily degraded by radiation of rf electromagnetic wave to cables in the FLL circuit. It is thought that the rf radiation induced rf current in the circuit, and was transmitted to the SQUID to modulate the bias current, resulting in the increase of the noise level. To avoid the degradation due to such indirect rf interference, the cooled set-up transformer was added to the FLL circuit since it was expected that the additional transformer would work as a "step-down" transformer against the induced rf current. It was shown that the noise level of a HTS-SQUID system (SQUITEM system) operated in an electromagnetically unshielded environment could be improved to the same level as that measured in a magnetically shielded room by the additional cooled transformer and appropriate impedance matching.

Thin films of a divinyl derivative of tetraphenyldiaminobiphenyl DvTPD were prepared by vapor deposition followed by annealing. After annealing at 200°C for 1 h, the film became practically insoluble to organic solvents due to polymerization. Electrical characteristics of the films were measured by current-voltage measurement, time-of-flight measurement, and dielectric measurement. It was found that the hole mobility of DvTPD decreases when the film is polymerized. As a consequence of the decrease of hole mobility, carrier balance in the emissive layer of an organic light emitting diode (OLED) was improved, leading to a higher quantum efficiency and a pure emission spectrum. The dielectric measurement also confirmed the high thermal stability of the polymerized film.