Advanced Top-Down Fabrication Process of A-IGZO TFT for Roll-to-Roll Backplane

Sung Jin KIM; Jong Hoon CHOI; Hyung Tae KIM; Hee Nam CHAE; Sung Min CHO

doi:10.1587/transele.E101.C.874

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Advanced Top-Down Fabrication Process of A-IGZO TFT for Roll-to-Roll Backplane

Sung Jin KIM, Jong Hoon CHOI, Hyung Tae KIM, Hee Nam CHAE, Sung Min CHO

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Summary :

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by an advanced self-aligned imprint lithography (ASAIL) method with a hybrid etching process. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The hybrid etching process was newly applied in the original SAIL process for the purpose of reducing plasma damage of a-IGZO channel layer during plasma etching in the ASAIL process. This research demonstrated that the a-IGZO TFT could be successfully fabricated by the ASAIL process. In particular, the hybrid etching process applied in this paper can be utilized for the back-channel-etch type a-IGZO TFT and further extended for the roll-to-roll backplane process.

Publication: IEICE TRANSACTIONS on Electronics Vol.E101-C No.11 pp.874-879

Publication Date: 2018/11/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E101.C.874

Type of Manuscript: Special Section INVITED PAPER (Special Section on Electronic Displays)

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Authors

Sung Jin KIM
  Sungkyunkwan Univ.,Samsung Institute of Technology
Jong Hoon CHOI
  Sungkyunkwan Univ.
Hyung Tae KIM
  Sungkyunkwan Univ.
Hee Nam CHAE
  Sungkyunkwan Univ.
Sung Min CHO
  Sungkyunkwan Univ.

Keyword

TFT, IGZO, imprint, roll-to-roll, OLED, rollable

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Sung Jin KIM, Jong Hoon CHOI, Hyung Tae KIM, Hee Nam CHAE, Sung Min CHO, "Advanced Top-Down Fabrication Process of A-IGZO TFT for Roll-to-Roll Backplane" in IEICE TRANSACTIONS on Electronics, vol. E101-C, no. 11, pp. 874-879, November 2018, doi: 10.1587/transele.E101.C.874.
Abstract: Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by an advanced self-aligned imprint lithography (ASAIL) method with a hybrid etching process. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The hybrid etching process was newly applied in the original SAIL process for the purpose of reducing plasma damage of a-IGZO channel layer during plasma etching in the ASAIL process. This research demonstrated that the a-IGZO TFT could be successfully fabricated by the ASAIL process. In particular, the hybrid etching process applied in this paper can be utilized for the back-channel-etch type a-IGZO TFT and further extended for the roll-to-roll backplane process.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.874/_p

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@ARTICLE{e101-c_11_874,
author={Sung Jin KIM, Jong Hoon CHOI, Hyung Tae KIM, Hee Nam CHAE, Sung Min CHO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Advanced Top-Down Fabrication Process of A-IGZO TFT for Roll-to-Roll Backplane},
year={2018},
volume={E101-C},
number={11},
pages={874-879},
abstract={Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by an advanced self-aligned imprint lithography (ASAIL) method with a hybrid etching process. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The hybrid etching process was newly applied in the original SAIL process for the purpose of reducing plasma damage of a-IGZO channel layer during plasma etching in the ASAIL process. This research demonstrated that the a-IGZO TFT could be successfully fabricated by the ASAIL process. In particular, the hybrid etching process applied in this paper can be utilized for the back-channel-etch type a-IGZO TFT and further extended for the roll-to-roll backplane process.},
keywords={},
doi={10.1587/transele.E101.C.874},
ISSN={1745-1353},
month={November},}

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TY - JOUR
TI - Advanced Top-Down Fabrication Process of A-IGZO TFT for Roll-to-Roll Backplane
T2 - IEICE TRANSACTIONS on Electronics
SP - 874
EP - 879
AU - Sung Jin KIM
AU - Jong Hoon CHOI
AU - Hyung Tae KIM
AU - Hee Nam CHAE
AU - Sung Min CHO
PY - 2018
DO - 10.1587/transele.E101.C.874
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2018
AB - Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by an advanced self-aligned imprint lithography (ASAIL) method with a hybrid etching process. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The hybrid etching process was newly applied in the original SAIL process for the purpose of reducing plasma damage of a-IGZO channel layer during plasma etching in the ASAIL process. This research demonstrated that the a-IGZO TFT could be successfully fabricated by the ASAIL process. In particular, the hybrid etching process applied in this paper can be utilized for the back-channel-etch type a-IGZO TFT and further extended for the roll-to-roll backplane process.
ER -