IEICE TRANSACTIONS on Electronics
Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response
Summary :
This paper describes, for the first time, an experimental study on the layout design considerations of GaAs HBT MMIC switchable-amplifier-chain-based power amplifiers (SWPAs) for CDMA handsets. The transient response of the quiescent current and output power (Pout) in GaAs HBT power amplifiers that consist of a main chain and a sub-chain is often affected by a thermal coupling between power stages and their bias circuits in the same chain or a thermal coupling between power stages and/or their bias circuits in different chains. In particular, excessively strong thermal coupling inside the MMIC SWPA causes failure in 3GPP-compliant inner loop power control tests. An experimental study reveals that both the preheating in the main/sub-chains and appropriate thermal coupling inside the main chain are very effective in reducing the turn-on delay for the two-parallel-amplifier-chain topology; for example, i) the sub-power stage is arranged near the main power stage, ii) the sub-driver stage is placed near the main driver stage and iii) the main driver bias circuit is placed near the main power stage and the sub-power stage. The SWPA operating in Band 9 (1749.9 to 1784.9 MHz), which was designed and fabricated from the foregoing considerations, shows a remarkable improvement in the Pout turn-on delay: a reduced power level error of 0.74 dB from turn-off to turn-on in the sub-amplifier chain and a reduced power level error of over 0.30 dB from turn-off to turn-on in the main amplifier chain. The main RF power measurements conducted with a 3.4-V supply voltage and a Band 9 WCDMA HSDPA modulated signal are as follows. The SWPA delivers a Pout of 28.5 dBm, a power gain (Gp) of 28 dB, and a PAE of 39% while restricting the ACLR1 to less than -40 dBc in the main amplifier chain. In the sub-amplifier chain, 17 dBm of Pout, 23.5 dB of Gp, and 27% of PAE are obtained at the same ACLR1 level.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.6 pp.618-631
- Publication Date
- 2017/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.618
- Type of Manuscript
- PAPER
- Category
- Microwaves, Millimeter-Waves
Authors
Kazuya YAMAMOTO
Mitsubishi Electric Corporation
Miyo MIYASHITA
Mitsubishi Electric Corporation
Takayuki MATSUZUKA
Mitsubishi Electric Corporation
Tomoyuki ASADA
Mitsubishi Electric Corporation
Kazunobu FUJII
Wave Technology Inc.
Satoshi SUZUKI
Mitsubishi Electric Corporation
Teruyuki SHIMURA
Mitsubishi Electric Corporation
Hiroaki SEKI
Mitsubishi Electric Corporation
Keyword
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Kazuya YAMAMOTO, Miyo MIYASHITA, Takayuki MATSUZUKA, Tomoyuki ASADA, Kazunobu FUJII, Satoshi SUZUKI, Teruyuki SHIMURA, Hiroaki SEKI, "Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 6, pp. 618-631, June 2017, doi: 10.1587/transele.E100.C.618.
Abstract: This paper describes, for the first time, an experimental study on the layout design considerations of GaAs HBT MMIC switchable-amplifier-chain-based power amplifiers (SWPAs) for CDMA handsets. The transient response of the quiescent current and output power (Pout) in GaAs HBT power amplifiers that consist of a main chain and a sub-chain is often affected by a thermal coupling between power stages and their bias circuits in the same chain or a thermal coupling between power stages and/or their bias circuits in different chains. In particular, excessively strong thermal coupling inside the MMIC SWPA causes failure in 3GPP-compliant inner loop power control tests. An experimental study reveals that both the preheating in the main/sub-chains and appropriate thermal coupling inside the main chain are very effective in reducing the turn-on delay for the two-parallel-amplifier-chain topology; for example, i) the sub-power stage is arranged near the main power stage, ii) the sub-driver stage is placed near the main driver stage and iii) the main driver bias circuit is placed near the main power stage and the sub-power stage. The SWPA operating in Band 9 (1749.9 to 1784.9 MHz), which was designed and fabricated from the foregoing considerations, shows a remarkable improvement in the Pout turn-on delay: a reduced power level error of 0.74 dB from turn-off to turn-on in the sub-amplifier chain and a reduced power level error of over 0.30 dB from turn-off to turn-on in the main amplifier chain. The main RF power measurements conducted with a 3.4-V supply voltage and a Band 9 WCDMA HSDPA modulated signal are as follows. The SWPA delivers a Pout of 28.5 dBm, a power gain (Gp) of 28 dB, and a PAE of 39% while restricting the ACLR1 to less than -40 dBc in the main amplifier chain. In the sub-amplifier chain, 17 dBm of Pout, 23.5 dB of Gp, and 27% of PAE are obtained at the same ACLR1 level.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.618/_p
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@ARTICLE{e100-c_6_618,
author={Kazuya YAMAMOTO, Miyo MIYASHITA, Takayuki MATSUZUKA, Tomoyuki ASADA, Kazunobu FUJII, Satoshi SUZUKI, Teruyuki SHIMURA, Hiroaki SEKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response},
year={2017},
volume={E100-C},
number={6},
pages={618-631},
abstract={This paper describes, for the first time, an experimental study on the layout design considerations of GaAs HBT MMIC switchable-amplifier-chain-based power amplifiers (SWPAs) for CDMA handsets. The transient response of the quiescent current and output power (Pout) in GaAs HBT power amplifiers that consist of a main chain and a sub-chain is often affected by a thermal coupling between power stages and their bias circuits in the same chain or a thermal coupling between power stages and/or their bias circuits in different chains. In particular, excessively strong thermal coupling inside the MMIC SWPA causes failure in 3GPP-compliant inner loop power control tests. An experimental study reveals that both the preheating in the main/sub-chains and appropriate thermal coupling inside the main chain are very effective in reducing the turn-on delay for the two-parallel-amplifier-chain topology; for example, i) the sub-power stage is arranged near the main power stage, ii) the sub-driver stage is placed near the main driver stage and iii) the main driver bias circuit is placed near the main power stage and the sub-power stage. The SWPA operating in Band 9 (1749.9 to 1784.9 MHz), which was designed and fabricated from the foregoing considerations, shows a remarkable improvement in the Pout turn-on delay: a reduced power level error of 0.74 dB from turn-off to turn-on in the sub-amplifier chain and a reduced power level error of over 0.30 dB from turn-off to turn-on in the main amplifier chain. The main RF power measurements conducted with a 3.4-V supply voltage and a Band 9 WCDMA HSDPA modulated signal are as follows. The SWPA delivers a Pout of 28.5 dBm, a power gain (Gp) of 28 dB, and a PAE of 39% while restricting the ACLR1 to less than -40 dBc in the main amplifier chain. In the sub-amplifier chain, 17 dBm of Pout, 23.5 dB of Gp, and 27% of PAE are obtained at the same ACLR1 level.},
keywords={},
doi={10.1587/transele.E100.C.618},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response
T2 - IEICE TRANSACTIONS on Electronics
SP - 618
EP - 631
AU - Kazuya YAMAMOTO
AU - Miyo MIYASHITA
AU - Takayuki MATSUZUKA
AU - Tomoyuki ASADA
AU - Kazunobu FUJII
AU - Satoshi SUZUKI
AU - Teruyuki SHIMURA
AU - Hiroaki SEKI
PY - 2017
DO - 10.1587/transele.E100.C.618
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2017
AB - This paper describes, for the first time, an experimental study on the layout design considerations of GaAs HBT MMIC switchable-amplifier-chain-based power amplifiers (SWPAs) for CDMA handsets. The transient response of the quiescent current and output power (Pout) in GaAs HBT power amplifiers that consist of a main chain and a sub-chain is often affected by a thermal coupling between power stages and their bias circuits in the same chain or a thermal coupling between power stages and/or their bias circuits in different chains. In particular, excessively strong thermal coupling inside the MMIC SWPA causes failure in 3GPP-compliant inner loop power control tests. An experimental study reveals that both the preheating in the main/sub-chains and appropriate thermal coupling inside the main chain are very effective in reducing the turn-on delay for the two-parallel-amplifier-chain topology; for example, i) the sub-power stage is arranged near the main power stage, ii) the sub-driver stage is placed near the main driver stage and iii) the main driver bias circuit is placed near the main power stage and the sub-power stage. The SWPA operating in Band 9 (1749.9 to 1784.9 MHz), which was designed and fabricated from the foregoing considerations, shows a remarkable improvement in the Pout turn-on delay: a reduced power level error of 0.74 dB from turn-off to turn-on in the sub-amplifier chain and a reduced power level error of over 0.30 dB from turn-off to turn-on in the main amplifier chain. The main RF power measurements conducted with a 3.4-V supply voltage and a Band 9 WCDMA HSDPA modulated signal are as follows. The SWPA delivers a Pout of 28.5 dBm, a power gain (Gp) of 28 dB, and a PAE of 39% while restricting the ACLR1 to less than -40 dBc in the main amplifier chain. In the sub-amplifier chain, 17 dBm of Pout, 23.5 dB of Gp, and 27% of PAE are obtained at the same ACLR1 level.
ER -
English
