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We have studied on thermally assisted nano-structured transistors made of superconductor ultra-thin films. These transistors potentially work as interface devices for Josephson-CMOS (complementary metal oxide semiconductor) hybrid memory systems, because they can generate a high output voltage of sub-V enough to drive a CMOS transistor. In addition, our superconductor transistors are formed with very fine lines down to several tens of nm in widths, leading to very small foot print enabling us to make large capacity hybrid memories. Our superconductor transistors are made with niobium titanium nitride (NbTiN) thin films deposited on thermally-oxidized silicon substrates, on which other superconductor circuits or semiconductor circuits can be formed. The NbTiN thickness dependence of the critical temperature and of resistivity suggest thermally activated vortex or anti-vortex behavior in pseudo-two-dimensional superconducting films plays an important role for the operating principle of the transistors. To show the potential that the transistors can drive MOS transistors, we analyzed the driving ability of the superconductor transistors with HSPICE simulation. We also showed the turn-on behavior of a MOS transistor used for readout of a CMOS memory cell experimentally. These results showed the high potential of superconductor transistors for Josephson-CMOS hybrid memories.
Kyosuke SANO
Nagoya University
Masato SUZUKI
Nagoya University
Kohei MARUYAMA
Nagoya University
Soya TANIGUCHI
Nagoya University
Masamitsu TANAKA
Nagoya University
Akira FUJIMAKI
Nagoya University
Masumi INOUE
Meijo University
Nobuyuki YOSHIKAWA
Yokohama National University
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Kyosuke SANO, Masato SUZUKI, Kohei MARUYAMA, Soya TANIGUCHI, Masamitsu TANAKA, Akira FUJIMAKI, Masumi INOUE, Nobuyuki YOSHIKAWA, "Thermally Assisted Superconductor Transistors for Josephson-CMOS Hybrid Memories" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 5, pp. 370-377, May 2018, doi: 10.1587/transele.E101.C.370.
Abstract: We have studied on thermally assisted nano-structured transistors made of superconductor ultra-thin films. These transistors potentially work as interface devices for Josephson-CMOS (complementary metal oxide semiconductor) hybrid memory systems, because they can generate a high output voltage of sub-V enough to drive a CMOS transistor. In addition, our superconductor transistors are formed with very fine lines down to several tens of nm in widths, leading to very small foot print enabling us to make large capacity hybrid memories. Our superconductor transistors are made with niobium titanium nitride (NbTiN) thin films deposited on thermally-oxidized silicon substrates, on which other superconductor circuits or semiconductor circuits can be formed. The NbTiN thickness dependence of the critical temperature and of resistivity suggest thermally activated vortex or anti-vortex behavior in pseudo-two-dimensional superconducting films plays an important role for the operating principle of the transistors. To show the potential that the transistors can drive MOS transistors, we analyzed the driving ability of the superconductor transistors with HSPICE simulation. We also showed the turn-on behavior of a MOS transistor used for readout of a CMOS memory cell experimentally. These results showed the high potential of superconductor transistors for Josephson-CMOS hybrid memories.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.370/_p
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@ARTICLE{e101-c_5_370,
author={Kyosuke SANO, Masato SUZUKI, Kohei MARUYAMA, Soya TANIGUCHI, Masamitsu TANAKA, Akira FUJIMAKI, Masumi INOUE, Nobuyuki YOSHIKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Thermally Assisted Superconductor Transistors for Josephson-CMOS Hybrid Memories},
year={2018},
volume={E101-C},
number={5},
pages={370-377},
abstract={We have studied on thermally assisted nano-structured transistors made of superconductor ultra-thin films. These transistors potentially work as interface devices for Josephson-CMOS (complementary metal oxide semiconductor) hybrid memory systems, because they can generate a high output voltage of sub-V enough to drive a CMOS transistor. In addition, our superconductor transistors are formed with very fine lines down to several tens of nm in widths, leading to very small foot print enabling us to make large capacity hybrid memories. Our superconductor transistors are made with niobium titanium nitride (NbTiN) thin films deposited on thermally-oxidized silicon substrates, on which other superconductor circuits or semiconductor circuits can be formed. The NbTiN thickness dependence of the critical temperature and of resistivity suggest thermally activated vortex or anti-vortex behavior in pseudo-two-dimensional superconducting films plays an important role for the operating principle of the transistors. To show the potential that the transistors can drive MOS transistors, we analyzed the driving ability of the superconductor transistors with HSPICE simulation. We also showed the turn-on behavior of a MOS transistor used for readout of a CMOS memory cell experimentally. These results showed the high potential of superconductor transistors for Josephson-CMOS hybrid memories.},
keywords={},
doi={10.1587/transele.E101.C.370},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Thermally Assisted Superconductor Transistors for Josephson-CMOS Hybrid Memories
T2 - IEICE TRANSACTIONS on Electronics
SP - 370
EP - 377
AU - Kyosuke SANO
AU - Masato SUZUKI
AU - Kohei MARUYAMA
AU - Soya TANIGUCHI
AU - Masamitsu TANAKA
AU - Akira FUJIMAKI
AU - Masumi INOUE
AU - Nobuyuki YOSHIKAWA
PY - 2018
DO - 10.1587/transele.E101.C.370
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2018
AB - We have studied on thermally assisted nano-structured transistors made of superconductor ultra-thin films. These transistors potentially work as interface devices for Josephson-CMOS (complementary metal oxide semiconductor) hybrid memory systems, because they can generate a high output voltage of sub-V enough to drive a CMOS transistor. In addition, our superconductor transistors are formed with very fine lines down to several tens of nm in widths, leading to very small foot print enabling us to make large capacity hybrid memories. Our superconductor transistors are made with niobium titanium nitride (NbTiN) thin films deposited on thermally-oxidized silicon substrates, on which other superconductor circuits or semiconductor circuits can be formed. The NbTiN thickness dependence of the critical temperature and of resistivity suggest thermally activated vortex or anti-vortex behavior in pseudo-two-dimensional superconducting films plays an important role for the operating principle of the transistors. To show the potential that the transistors can drive MOS transistors, we analyzed the driving ability of the superconductor transistors with HSPICE simulation. We also showed the turn-on behavior of a MOS transistor used for readout of a CMOS memory cell experimentally. These results showed the high potential of superconductor transistors for Josephson-CMOS hybrid memories.
ER -