High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region

Koichi IIYAMA; Takeo MARUYAMA; Ryoichi GYOBU; Takuya HISHIKI; Toshiyuki SHIMOTORI

doi:10.1587/transele.E101.C.574

IEICE TRANSACTIONS on Electronics

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High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region

Koichi IIYAMA, Takeo MARUYAMA, Ryoichi GYOBU, Takuya HISHIKI, Toshiyuki SHIMOTORI

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Summary :

Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and were characterized at 405nm wavelength for Blu-ray applications. The size of each APD element is 50×50µm². The dark current was 10pA at low bias voltage, and low crosstalk of about -80dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1A/W at low bias voltage, the responsivity is enhanced to more than 1A/W at less than 10V bias voltage due to avalanche amplification. The wide bandwidth of 1.5GHz was achieved with the responsivity of more than 1A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system.

Publication: IEICE TRANSACTIONS on Electronics Vol.E101-C No.7 pp.574-580

Publication Date: 2018/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E101.C.574

Type of Manuscript: Special Section INVITED PAPER (Special Section on Distinguished Papers in Photonics)

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Authors

Koichi IIYAMA
  Kanazawa University
Takeo MARUYAMA
  Kanazawa University
Ryoichi GYOBU
  Kanazawa University
Takuya HISHIKI
  Kanazawa University
Toshiyuki SHIMOTORI
  Kanazawa University

Keyword

silicon, photodiode, avalanche photodiode, CMOS, blu-ray

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Koichi IIYAMA, Takeo MARUYAMA, Ryoichi GYOBU, Takuya HISHIKI, Toshiyuki SHIMOTORI, "High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region" in IEICE TRANSACTIONS on Electronics, vol. E101-C, no. 7, pp. 574-580, July 2018, doi: 10.1587/transele.E101.C.574.
Abstract: Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and were characterized at 405nm wavelength for Blu-ray applications. The size of each APD element is 50×50µm². The dark current was 10pA at low bias voltage, and low crosstalk of about -80dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1A/W at low bias voltage, the responsivity is enhanced to more than 1A/W at less than 10V bias voltage due to avalanche amplification. The wide bandwidth of 1.5GHz was achieved with the responsivity of more than 1A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.574/_p

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@ARTICLE{e101-c_7_574,
author={Koichi IIYAMA, Takeo MARUYAMA, Ryoichi GYOBU, Takuya HISHIKI, Toshiyuki SHIMOTORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region},
year={2018},
volume={E101-C},
number={7},
pages={574-580},
abstract={Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and were characterized at 405nm wavelength for Blu-ray applications. The size of each APD element is 50×50µm². The dark current was 10pA at low bias voltage, and low crosstalk of about -80dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1A/W at low bias voltage, the responsivity is enhanced to more than 1A/W at less than 10V bias voltage due to avalanche amplification. The wide bandwidth of 1.5GHz was achieved with the responsivity of more than 1A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system.},
keywords={},
doi={10.1587/transele.E101.C.574},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region
T2 - IEICE TRANSACTIONS on Electronics
SP - 574
EP - 580
AU - Koichi IIYAMA
AU - Takeo MARUYAMA
AU - Ryoichi GYOBU
AU - Takuya HISHIKI
AU - Toshiyuki SHIMOTORI
PY - 2018
DO - 10.1587/transele.E101.C.574
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2018
AB - Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and were characterized at 405nm wavelength for Blu-ray applications. The size of each APD element is 50×50µm². The dark current was 10pA at low bias voltage, and low crosstalk of about -80dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1A/W at low bias voltage, the responsivity is enhanced to more than 1A/W at less than 10V bias voltage due to avalanche amplification. The wide bandwidth of 1.5GHz was achieved with the responsivity of more than 1A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system.
ER -

IEICE TRANSACTIONS on Electronics