A high-efficiency CMOS rectifier circuit for UHF RFID applications was developed. The rectifier utilizes a self-Vth-cancellation (SVC) scheme in which the threshold voltage of MOSFETs is cancelled by applying gate bias voltage generated from the output voltage of the rectifier itself. A very simple circuit configuration and zero power dissipation characteristics in biasing enable excellent power conversion efficiency (PCE), especially under small RF input power conditions. At higher RF input power conditions, the PCE of the rectifier automatically decreases. This is the built-in self-power-regulation function. The proposed SVC CMOS rectifier was fabricated with a 0.35-µm CMOS process and the measured performance was compared with those of conventional nMOS, pMOS, and CMOS rectifiers and other types of Vth cancellation rectifiers as well. The SVC CMOS rectifier achieves 32% of PCE at the -10 dBm RF input power condition. This PCE is larger than rectifiers reported to date under this condition.
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Koji KOTANI, Takashi ITO, "Self-Vth-Cancellation High-Efficiency CMOS Rectifier Circuit for UHF RFIDs" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 1, pp. 153-160, January 2009, doi: 10.1587/transele.E92.C.153.
Abstract: A high-efficiency CMOS rectifier circuit for UHF RFID applications was developed. The rectifier utilizes a self-Vth-cancellation (SVC) scheme in which the threshold voltage of MOSFETs is cancelled by applying gate bias voltage generated from the output voltage of the rectifier itself. A very simple circuit configuration and zero power dissipation characteristics in biasing enable excellent power conversion efficiency (PCE), especially under small RF input power conditions. At higher RF input power conditions, the PCE of the rectifier automatically decreases. This is the built-in self-power-regulation function. The proposed SVC CMOS rectifier was fabricated with a 0.35-µm CMOS process and the measured performance was compared with those of conventional nMOS, pMOS, and CMOS rectifiers and other types of Vth cancellation rectifiers as well. The SVC CMOS rectifier achieves 32% of PCE at the -10 dBm RF input power condition. This PCE is larger than rectifiers reported to date under this condition.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.153/_p
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@ARTICLE{e92-c_1_153,
author={Koji KOTANI, Takashi ITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Self-Vth-Cancellation High-Efficiency CMOS Rectifier Circuit for UHF RFIDs},
year={2009},
volume={E92-C},
number={1},
pages={153-160},
abstract={A high-efficiency CMOS rectifier circuit for UHF RFID applications was developed. The rectifier utilizes a self-Vth-cancellation (SVC) scheme in which the threshold voltage of MOSFETs is cancelled by applying gate bias voltage generated from the output voltage of the rectifier itself. A very simple circuit configuration and zero power dissipation characteristics in biasing enable excellent power conversion efficiency (PCE), especially under small RF input power conditions. At higher RF input power conditions, the PCE of the rectifier automatically decreases. This is the built-in self-power-regulation function. The proposed SVC CMOS rectifier was fabricated with a 0.35-µm CMOS process and the measured performance was compared with those of conventional nMOS, pMOS, and CMOS rectifiers and other types of Vth cancellation rectifiers as well. The SVC CMOS rectifier achieves 32% of PCE at the -10 dBm RF input power condition. This PCE is larger than rectifiers reported to date under this condition.},
keywords={},
doi={10.1587/transele.E92.C.153},
ISSN={1745-1353},
month={January},}
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TY - JOUR
TI - Self-Vth-Cancellation High-Efficiency CMOS Rectifier Circuit for UHF RFIDs
T2 - IEICE TRANSACTIONS on Electronics
SP - 153
EP - 160
AU - Koji KOTANI
AU - Takashi ITO
PY - 2009
DO - 10.1587/transele.E92.C.153
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2009
AB - A high-efficiency CMOS rectifier circuit for UHF RFID applications was developed. The rectifier utilizes a self-Vth-cancellation (SVC) scheme in which the threshold voltage of MOSFETs is cancelled by applying gate bias voltage generated from the output voltage of the rectifier itself. A very simple circuit configuration and zero power dissipation characteristics in biasing enable excellent power conversion efficiency (PCE), especially under small RF input power conditions. At higher RF input power conditions, the PCE of the rectifier automatically decreases. This is the built-in self-power-regulation function. The proposed SVC CMOS rectifier was fabricated with a 0.35-µm CMOS process and the measured performance was compared with those of conventional nMOS, pMOS, and CMOS rectifiers and other types of Vth cancellation rectifiers as well. The SVC CMOS rectifier achieves 32% of PCE at the -10 dBm RF input power condition. This PCE is larger than rectifiers reported to date under this condition.
ER -