Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design
Summary :
In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on the analysis of the relationship among different short-channel effects such as velocity saturation effect (VSE), channel-length modulation (CLM), and carrier heating effect (CHE), the compact model for the channel thermal noise was analytically derived as a simple form. In order to simulate MOSFET's noise characteristics in circuit simulators, an appropriate methodology is proposed. The used compact noise model is verified by comparing simulated results to the measured data at device and circuit level by using 65 nm and 130 nm CMOS technologies, respectively.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E92-C No.5 pp.627-634
- Publication Date
- 2009/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E92.C.627
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Jongwook JEON, Ickhyun SONG, Jong Duk LEE, Byung-Gook PARK, Hyungcheol SHIN, "Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 627-634, May 2009, doi: 10.1587/transele.E92.C.627.
Abstract: In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on the analysis of the relationship among different short-channel effects such as velocity saturation effect (VSE), channel-length modulation (CLM), and carrier heating effect (CHE), the compact model for the channel thermal noise was analytically derived as a simple form. In order to simulate MOSFET's noise characteristics in circuit simulators, an appropriate methodology is proposed. The used compact noise model is verified by comparing simulated results to the measured data at device and circuit level by using 65 nm and 130 nm CMOS technologies, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.627/_p
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@ARTICLE{e92-c_5_627,
author={Jongwook JEON, Ickhyun SONG, Jong Duk LEE, Byung-Gook PARK, Hyungcheol SHIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design},
year={2009},
volume={E92-C},
number={5},
pages={627-634},
abstract={In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on the analysis of the relationship among different short-channel effects such as velocity saturation effect (VSE), channel-length modulation (CLM), and carrier heating effect (CHE), the compact model for the channel thermal noise was analytically derived as a simple form. In order to simulate MOSFET's noise characteristics in circuit simulators, an appropriate methodology is proposed. The used compact noise model is verified by comparing simulated results to the measured data at device and circuit level by using 65 nm and 130 nm CMOS technologies, respectively.},
keywords={},
doi={10.1587/transele.E92.C.627},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design
T2 - IEICE TRANSACTIONS on Electronics
SP - 627
EP - 634
AU - Jongwook JEON
AU - Ickhyun SONG
AU - Jong Duk LEE
AU - Byung-Gook PARK
AU - Hyungcheol SHIN
PY - 2009
DO - 10.1587/transele.E92.C.627
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on the analysis of the relationship among different short-channel effects such as velocity saturation effect (VSE), channel-length modulation (CLM), and carrier heating effect (CHE), the compact model for the channel thermal noise was analytically derived as a simple form. In order to simulate MOSFET's noise characteristics in circuit simulators, an appropriate methodology is proposed. The used compact noise model is verified by comparing simulated results to the measured data at device and circuit level by using 65 nm and 130 nm CMOS technologies, respectively.
ER -
English
