IEICE TRANSACTIONS on Electronics
2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
Summary :
Drain collapse in AlGaN/GaN HFET is analyzed using a two-dimensional device simulator. Two-step saturation is obtained, assuming hole-trap type surface states on the AlGaN surface and a short negative-charge-injected region at the drain side of the gate. Due to the surface electric potential pinning by the surface traps, the negative charge injected region forms a constant potential like in a metal gate region and it acts as an FET with a virtual gate. The electron concentration profile reveals that the first saturation occurs by pinch-off in the virtual gate region and the second saturation occurs by the pinch-off in the metal gate region. Due to the short-channel effect of the virtual gate FET, the saturation current increases until it finally reaches the saturation current of the intrinsic metal gate FET. Current collapses with current degradation at the knee voltage in the I-V characteristics can be explained by the formation of the virtual gate.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.8 pp.1218-1224
- Publication Date
- 2010/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.1218
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
- Category
- GaN-based Devices
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Yusuke IKAWA, Yorihide YUASA, Cheng-Yu HU, Jin-Ping AO, Yasuo OHNO, "2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1218-1224, August 2010, doi: 10.1587/transele.E93.C.1218.
Abstract: Drain collapse in AlGaN/GaN HFET is analyzed using a two-dimensional device simulator. Two-step saturation is obtained, assuming hole-trap type surface states on the AlGaN surface and a short negative-charge-injected region at the drain side of the gate. Due to the surface electric potential pinning by the surface traps, the negative charge injected region forms a constant potential like in a metal gate region and it acts as an FET with a virtual gate. The electron concentration profile reveals that the first saturation occurs by pinch-off in the virtual gate region and the second saturation occurs by the pinch-off in the metal gate region. Due to the short-channel effect of the virtual gate FET, the saturation current increases until it finally reaches the saturation current of the intrinsic metal gate FET. Current collapses with current degradation at the knee voltage in the I-V characteristics can be explained by the formation of the virtual gate.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1218/_p
Copy
@ARTICLE{e93-c_8_1218,
author={Yusuke IKAWA, Yorihide YUASA, Cheng-Yu HU, Jin-Ping AO, Yasuo OHNO, },
journal={IEICE TRANSACTIONS on Electronics},
title={2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection},
year={2010},
volume={E93-C},
number={8},
pages={1218-1224},
abstract={Drain collapse in AlGaN/GaN HFET is analyzed using a two-dimensional device simulator. Two-step saturation is obtained, assuming hole-trap type surface states on the AlGaN surface and a short negative-charge-injected region at the drain side of the gate. Due to the surface electric potential pinning by the surface traps, the negative charge injected region forms a constant potential like in a metal gate region and it acts as an FET with a virtual gate. The electron concentration profile reveals that the first saturation occurs by pinch-off in the virtual gate region and the second saturation occurs by the pinch-off in the metal gate region. Due to the short-channel effect of the virtual gate FET, the saturation current increases until it finally reaches the saturation current of the intrinsic metal gate FET. Current collapses with current degradation at the knee voltage in the I-V characteristics can be explained by the formation of the virtual gate.},
keywords={},
doi={10.1587/transele.E93.C.1218},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
T2 - IEICE TRANSACTIONS on Electronics
SP - 1218
EP - 1224
AU - Yusuke IKAWA
AU - Yorihide YUASA
AU - Cheng-Yu HU
AU - Jin-Ping AO
AU - Yasuo OHNO
PY - 2010
DO - 10.1587/transele.E93.C.1218
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - Drain collapse in AlGaN/GaN HFET is analyzed using a two-dimensional device simulator. Two-step saturation is obtained, assuming hole-trap type surface states on the AlGaN surface and a short negative-charge-injected region at the drain side of the gate. Due to the surface electric potential pinning by the surface traps, the negative charge injected region forms a constant potential like in a metal gate region and it acts as an FET with a virtual gate. The electron concentration profile reveals that the first saturation occurs by pinch-off in the virtual gate region and the second saturation occurs by the pinch-off in the metal gate region. Due to the short-channel effect of the virtual gate FET, the saturation current increases until it finally reaches the saturation current of the intrinsic metal gate FET. Current collapses with current degradation at the knee voltage in the I-V characteristics can be explained by the formation of the virtual gate.
ER -
English
