IEICE TRANSACTIONS on Electronics
Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
Summary :
We investigated collector current spreading in InGaAs single heterojunction bipolar transistors (SHBTs) having a collector thickness of 75 nm. SHBTs were fabricated with three different emitter widths -- 200, 400, and 600 nm -- and the highest cutoff frequency that was obtained was 468 GHz. The relationship between the current density at the highest cutoff frequency and the emitter width could not be used to estimate the current spreading because it was independent of the collector-base voltage. However, the relationship between the current density with the increase in the total collector-base capacitance and the emitter width indicates current spreading in the collector. The current spreading was estimated to be approximately 90 nm.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.5 pp.644-647
- Publication Date
- 2010/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.644
- Type of Manuscript
- BRIEF PAPER
- Category
- Compound Semiconductor Devices
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Yasuyuki MIYAMOTO, Shinnosuke TAKAHASHI, Takashi KOBAYASHI, Hiroyuki SUZUKI, Kazuhito FURUYA, "Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 644-647, May 2010, doi: 10.1587/transele.E93.C.644.
Abstract: We investigated collector current spreading in InGaAs single heterojunction bipolar transistors (SHBTs) having a collector thickness of 75 nm. SHBTs were fabricated with three different emitter widths -- 200, 400, and 600 nm -- and the highest cutoff frequency that was obtained was 468 GHz. The relationship between the current density at the highest cutoff frequency and the emitter width could not be used to estimate the current spreading because it was independent of the collector-base voltage. However, the relationship between the current density with the increase in the total collector-base capacitance and the emitter width indicates current spreading in the collector. The current spreading was estimated to be approximately 90 nm.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.644/_p
Copy
@ARTICLE{e93-c_5_644,
author={Yasuyuki MIYAMOTO, Shinnosuke TAKAHASHI, Takashi KOBAYASHI, Hiroyuki SUZUKI, Kazuhito FURUYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector},
year={2010},
volume={E93-C},
number={5},
pages={644-647},
abstract={We investigated collector current spreading in InGaAs single heterojunction bipolar transistors (SHBTs) having a collector thickness of 75 nm. SHBTs were fabricated with three different emitter widths -- 200, 400, and 600 nm -- and the highest cutoff frequency that was obtained was 468 GHz. The relationship between the current density at the highest cutoff frequency and the emitter width could not be used to estimate the current spreading because it was independent of the collector-base voltage. However, the relationship between the current density with the increase in the total collector-base capacitance and the emitter width indicates current spreading in the collector. The current spreading was estimated to be approximately 90 nm.},
keywords={},
doi={10.1587/transele.E93.C.644},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
T2 - IEICE TRANSACTIONS on Electronics
SP - 644
EP - 647
AU - Yasuyuki MIYAMOTO
AU - Shinnosuke TAKAHASHI
AU - Takashi KOBAYASHI
AU - Hiroyuki SUZUKI
AU - Kazuhito FURUYA
PY - 2010
DO - 10.1587/transele.E93.C.644
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - We investigated collector current spreading in InGaAs single heterojunction bipolar transistors (SHBTs) having a collector thickness of 75 nm. SHBTs were fabricated with three different emitter widths -- 200, 400, and 600 nm -- and the highest cutoff frequency that was obtained was 468 GHz. The relationship between the current density at the highest cutoff frequency and the emitter width could not be used to estimate the current spreading because it was independent of the collector-base voltage. However, the relationship between the current density with the increase in the total collector-base capacitance and the emitter width indicates current spreading in the collector. The current spreading was estimated to be approximately 90 nm.
ER -
English
