In this paper, a fully integrated 5 GHz voltage controlled oscillator (VCO) is presented. The VCO is designed with 0.18 µm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, a novel varactors pair circuit is proposed to cancel effects of capacitance fluctuation that makes harmonic currents which increase phase noise of VCO. The VCO with the proposed varactor circuit has tuning range from 5.1 GHz to 6.1 GHz (relative value of 17.9%) and phase noise of lower than -110.8 dBc/Hz at 1 MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182 dBc/Hz.
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Tuan Thanh TA, Suguru KAMEDA, Tadashi TAKAGI, Kazuo TSUBOUCHI, "A 5 GHz Band Low Noise and Wide Tuning Range Si-CMOS VCO with a Novel Varactors Pair Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 6, pp. 755-762, June 2010, doi: 10.1587/transele.E93.C.755.
Abstract: In this paper, a fully integrated 5 GHz voltage controlled oscillator (VCO) is presented. The VCO is designed with 0.18 µm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, a novel varactors pair circuit is proposed to cancel effects of capacitance fluctuation that makes harmonic currents which increase phase noise of VCO. The VCO with the proposed varactor circuit has tuning range from 5.1 GHz to 6.1 GHz (relative value of 17.9%) and phase noise of lower than -110.8 dBc/Hz at 1 MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182 dBc/Hz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.755/_p
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@ARTICLE{e93-c_6_755,
author={Tuan Thanh TA, Suguru KAMEDA, Tadashi TAKAGI, Kazuo TSUBOUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 5 GHz Band Low Noise and Wide Tuning Range Si-CMOS VCO with a Novel Varactors Pair Circuit},
year={2010},
volume={E93-C},
number={6},
pages={755-762},
abstract={In this paper, a fully integrated 5 GHz voltage controlled oscillator (VCO) is presented. The VCO is designed with 0.18 µm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, a novel varactors pair circuit is proposed to cancel effects of capacitance fluctuation that makes harmonic currents which increase phase noise of VCO. The VCO with the proposed varactor circuit has tuning range from 5.1 GHz to 6.1 GHz (relative value of 17.9%) and phase noise of lower than -110.8 dBc/Hz at 1 MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182 dBc/Hz.},
keywords={},
doi={10.1587/transele.E93.C.755},
ISSN={1745-1353},
month={June},}
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TY - JOUR
TI - A 5 GHz Band Low Noise and Wide Tuning Range Si-CMOS VCO with a Novel Varactors Pair Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 755
EP - 762
AU - Tuan Thanh TA
AU - Suguru KAMEDA
AU - Tadashi TAKAGI
AU - Kazuo TSUBOUCHI
PY - 2010
DO - 10.1587/transele.E93.C.755
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2010
AB - In this paper, a fully integrated 5 GHz voltage controlled oscillator (VCO) is presented. The VCO is designed with 0.18 µm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, a novel varactors pair circuit is proposed to cancel effects of capacitance fluctuation that makes harmonic currents which increase phase noise of VCO. The VCO with the proposed varactor circuit has tuning range from 5.1 GHz to 6.1 GHz (relative value of 17.9%) and phase noise of lower than -110.8 dBc/Hz at 1 MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182 dBc/Hz.
ER -