A dual-band divide-by-2 quadrature injection-locked frequency divider (QILFD) is proposed to achieve high-speed, low power, wide-locking range, and accurate quadrature output phases. The QILFD consists of two dual-resonance differential voltage controlled oscillators and four coupling NMOS injectors in a ring configuration. The injectors are used as coupling devices of two differential ILFDs and are also used as common source amplifiers. The proposed QILFD has been implemented with the TSMC 90 nm CMOS technology and the core power consumption is 2.31 mW at the dc drain-source bias of 0.5 V. At the input power of 0 dBm, the low-band and high-band divide-by-2 operation ranges are respectively from 7.0 GHz to 10.1 GHz and 19.8 GHz to 24.6 GHz.
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Sheng-Lyang JANG, Li-Te CHOU, Jhin-Fang HUANG, Chia-Wei CHANG, "A Dual-Band Dual-Resonance Quadrature Injection-Locked Frequency Divider" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 8, pp. 1336-1339, August 2011, doi: 10.1587/transele.E94.C.1336.
Abstract: A dual-band divide-by-2 quadrature injection-locked frequency divider (QILFD) is proposed to achieve high-speed, low power, wide-locking range, and accurate quadrature output phases. The QILFD consists of two dual-resonance differential voltage controlled oscillators and four coupling NMOS injectors in a ring configuration. The injectors are used as coupling devices of two differential ILFDs and are also used as common source amplifiers. The proposed QILFD has been implemented with the TSMC 90 nm CMOS technology and the core power consumption is 2.31 mW at the dc drain-source bias of 0.5 V. At the input power of 0 dBm, the low-band and high-band divide-by-2 operation ranges are respectively from 7.0 GHz to 10.1 GHz and 19.8 GHz to 24.6 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.1336/_p
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@ARTICLE{e94-c_8_1336,
author={Sheng-Lyang JANG, Li-Te CHOU, Jhin-Fang HUANG, Chia-Wei CHANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Dual-Band Dual-Resonance Quadrature Injection-Locked Frequency Divider},
year={2011},
volume={E94-C},
number={8},
pages={1336-1339},
abstract={A dual-band divide-by-2 quadrature injection-locked frequency divider (QILFD) is proposed to achieve high-speed, low power, wide-locking range, and accurate quadrature output phases. The QILFD consists of two dual-resonance differential voltage controlled oscillators and four coupling NMOS injectors in a ring configuration. The injectors are used as coupling devices of two differential ILFDs and are also used as common source amplifiers. The proposed QILFD has been implemented with the TSMC 90 nm CMOS technology and the core power consumption is 2.31 mW at the dc drain-source bias of 0.5 V. At the input power of 0 dBm, the low-band and high-band divide-by-2 operation ranges are respectively from 7.0 GHz to 10.1 GHz and 19.8 GHz to 24.6 GHz.},
keywords={},
doi={10.1587/transele.E94.C.1336},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - A Dual-Band Dual-Resonance Quadrature Injection-Locked Frequency Divider
T2 - IEICE TRANSACTIONS on Electronics
SP - 1336
EP - 1339
AU - Sheng-Lyang JANG
AU - Li-Te CHOU
AU - Jhin-Fang HUANG
AU - Chia-Wei CHANG
PY - 2011
DO - 10.1587/transele.E94.C.1336
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2011
AB - A dual-band divide-by-2 quadrature injection-locked frequency divider (QILFD) is proposed to achieve high-speed, low power, wide-locking range, and accurate quadrature output phases. The QILFD consists of two dual-resonance differential voltage controlled oscillators and four coupling NMOS injectors in a ring configuration. The injectors are used as coupling devices of two differential ILFDs and are also used as common source amplifiers. The proposed QILFD has been implemented with the TSMC 90 nm CMOS technology and the core power consumption is 2.31 mW at the dc drain-source bias of 0.5 V. At the input power of 0 dBm, the low-band and high-band divide-by-2 operation ranges are respectively from 7.0 GHz to 10.1 GHz and 19.8 GHz to 24.6 GHz.
ER -