IEICE TRANSACTIONS on Electronics
Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires
Summary :
In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transistors (DHBTs) with buried SiO2 wires. The SiO2 wires were buried in the collector and subcollector layers by metalorganic chemical vapor deposition toward reduction of the base-collector capacitance under the base electrode. A current gain of 22 was obtained at an emitter current density of 1.25 MA/cm2 for a DHBT with an emitter width of 400 nm. The DC characteristics of DHBTs with buried SiO2 wires were the same as those of DHBTs without buried SiO2 wires on the same substrate. A current gain cutoff frequency (fT) of 213 GHz and a maximum oscillation frequency (fmax) of 100 GHz were obtained at an emitter current density of 725 kA/cm2.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.830-834
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.830
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Naoaki TAKEBE, Takashi KOBAYASHI, Hiroyuki SUZUKI, Yasuyuki MIYAMOTO, Kazuhito FURUYA, "Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 830-834, May 2011, doi: 10.1587/transele.E94.C.830.
Abstract: In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transistors (DHBTs) with buried SiO2 wires. The SiO2 wires were buried in the collector and subcollector layers by metalorganic chemical vapor deposition toward reduction of the base-collector capacitance under the base electrode. A current gain of 22 was obtained at an emitter current density of 1.25 MA/cm2 for a DHBT with an emitter width of 400 nm. The DC characteristics of DHBTs with buried SiO2 wires were the same as those of DHBTs without buried SiO2 wires on the same substrate. A current gain cutoff frequency (fT) of 213 GHz and a maximum oscillation frequency (fmax) of 100 GHz were obtained at an emitter current density of 725 kA/cm2.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.830/_p
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@ARTICLE{e94-c_5_830,
author={Naoaki TAKEBE, Takashi KOBAYASHI, Hiroyuki SUZUKI, Yasuyuki MIYAMOTO, Kazuhito FURUYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires},
year={2011},
volume={E94-C},
number={5},
pages={830-834},
abstract={In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transistors (DHBTs) with buried SiO2 wires. The SiO2 wires were buried in the collector and subcollector layers by metalorganic chemical vapor deposition toward reduction of the base-collector capacitance under the base electrode. A current gain of 22 was obtained at an emitter current density of 1.25 MA/cm2 for a DHBT with an emitter width of 400 nm. The DC characteristics of DHBTs with buried SiO2 wires were the same as those of DHBTs without buried SiO2 wires on the same substrate. A current gain cutoff frequency (fT) of 213 GHz and a maximum oscillation frequency (fmax) of 100 GHz were obtained at an emitter current density of 725 kA/cm2.},
keywords={},
doi={10.1587/transele.E94.C.830},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires
T2 - IEICE TRANSACTIONS on Electronics
SP - 830
EP - 834
AU - Naoaki TAKEBE
AU - Takashi KOBAYASHI
AU - Hiroyuki SUZUKI
AU - Yasuyuki MIYAMOTO
AU - Kazuhito FURUYA
PY - 2011
DO - 10.1587/transele.E94.C.830
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transistors (DHBTs) with buried SiO2 wires. The SiO2 wires were buried in the collector and subcollector layers by metalorganic chemical vapor deposition toward reduction of the base-collector capacitance under the base electrode. A current gain of 22 was obtained at an emitter current density of 1.25 MA/cm2 for a DHBT with an emitter width of 400 nm. The DC characteristics of DHBTs with buried SiO2 wires were the same as those of DHBTs without buried SiO2 wires on the same substrate. A current gain cutoff frequency (fT) of 213 GHz and a maximum oscillation frequency (fmax) of 100 GHz were obtained at an emitter current density of 725 kA/cm2.
ER -
English
