IEICE TRANSACTIONS on Electronics
Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
Summary :
With the aim of achieving heterogeneous integration of compound semiconductors with silicon technology, the fabrication of an InP/InGaAs transferred-substrate HBT (TS-HBT) on a Si substrate is reported. A current gain of 70 and a maximum current density of 12.3 mA/µm2 were confirmed in a TS-HBT with a 340-nm-wide emitter. From microwave characteristics of the TS-HBT obtained after de-embedding, a cutoff frequency (fT) of 510 GHz and a 26% reduction of the base-collector capacitance were estimated. However, the observed fT was too high for an HBT with a 150-nm-thick collector. This discrepancy can be explained by the error in de-embedding, because an open pad is observed to have large capacitance and strong frequency dependence due to the conductivity of the Si substrate.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.8 pp.1323-1326
- Publication Date
- 2012/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.1323
- Type of Manuscript
- BRIEF PAPER
- Category
- III-V High-Speed Devices and Circuits
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Yutaro YAMAGUCHI, Takeshi SAGAI, Yasuyuki MIYAMOTO, "Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 8, pp. 1323-1326, August 2012, doi: 10.1587/transele.E95.C.1323.
Abstract: With the aim of achieving heterogeneous integration of compound semiconductors with silicon technology, the fabrication of an InP/InGaAs transferred-substrate HBT (TS-HBT) on a Si substrate is reported. A current gain of 70 and a maximum current density of 12.3 mA/µm2 were confirmed in a TS-HBT with a 340-nm-wide emitter. From microwave characteristics of the TS-HBT obtained after de-embedding, a cutoff frequency (fT) of 510 GHz and a 26% reduction of the base-collector capacitance were estimated. However, the observed fT was too high for an HBT with a 150-nm-thick collector. This discrepancy can be explained by the error in de-embedding, because an open pad is observed to have large capacitance and strong frequency dependence due to the conductivity of the Si substrate.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1323/_p
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@ARTICLE{e95-c_8_1323,
author={Yutaro YAMAGUCHI, Takeshi SAGAI, Yasuyuki MIYAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process},
year={2012},
volume={E95-C},
number={8},
pages={1323-1326},
abstract={With the aim of achieving heterogeneous integration of compound semiconductors with silicon technology, the fabrication of an InP/InGaAs transferred-substrate HBT (TS-HBT) on a Si substrate is reported. A current gain of 70 and a maximum current density of 12.3 mA/µm2 were confirmed in a TS-HBT with a 340-nm-wide emitter. From microwave characteristics of the TS-HBT obtained after de-embedding, a cutoff frequency (fT) of 510 GHz and a 26% reduction of the base-collector capacitance were estimated. However, the observed fT was too high for an HBT with a 150-nm-thick collector. This discrepancy can be explained by the error in de-embedding, because an open pad is observed to have large capacitance and strong frequency dependence due to the conductivity of the Si substrate.},
keywords={},
doi={10.1587/transele.E95.C.1323},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 1323
EP - 1326
AU - Yutaro YAMAGUCHI
AU - Takeshi SAGAI
AU - Yasuyuki MIYAMOTO
PY - 2012
DO - 10.1587/transele.E95.C.1323
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2012
AB - With the aim of achieving heterogeneous integration of compound semiconductors with silicon technology, the fabrication of an InP/InGaAs transferred-substrate HBT (TS-HBT) on a Si substrate is reported. A current gain of 70 and a maximum current density of 12.3 mA/µm2 were confirmed in a TS-HBT with a 340-nm-wide emitter. From microwave characteristics of the TS-HBT obtained after de-embedding, a cutoff frequency (fT) of 510 GHz and a 26% reduction of the base-collector capacitance were estimated. However, the observed fT was too high for an HBT with a 150-nm-thick collector. This discrepancy can be explained by the error in de-embedding, because an open pad is observed to have large capacitance and strong frequency dependence due to the conductivity of the Si substrate.
ER -
English
