With the aim of achieving heterogeneous integration of compound semiconductors with silicon technology, the fabrication of an InP/InGaAs transferred-substrate HBT (TS-HBT) on a Si substrate is reported. A current gain of 70 and a maximum current density of 12.3 mA/µm2 were confirmed in a TS-HBT with a 340-nm-wide emitter. From microwave characteristics of the TS-HBT obtained after de-embedding, a cutoff frequency (fT) of 510 GHz and a 26% reduction of the base-collector capacitance were estimated. However, the observed fT was too high for an HBT with a 150-nm-thick collector. This discrepancy can be explained by the error in de-embedding, because an open pad is observed to have large capacitance and strong frequency dependence due to the conductivity of the Si substrate.

Given a set P of n points and an integer k, we wish to place k facilities on points in P so that the minimum distance between facilities is maximized. The problem is called the k-dispersion problem, and the set of such k points is called a k-dispersion of P. Note that the 2-dispersion problem corresponds to the computation of the diameter of P. Thus, the k-dispersion problem is a natural generalization of the diameter problem. In this paper, we consider the case of k=3, which is the 3-dispersion problem, when P is in convex position. We present an O(n2)-time algorithm to compute a 3-dispersion of P.

A methodology for obtaining semi-custom high-power amplifiers (HPAs) is described. The semi-custom concept pertains to the notion that a selectable output power is attainable by replacing only transistors. To compensate for the mismatch loss, a new output matching network that can be easily tuned by wiring is proposed. Design equations were derived to determine the circuit parameters and specify the bandwidth limitations. To verify this methodology, a semi-custom HPA with GaN HEMTs was fabricated in the S-band. A selectable output power from 240 to 150 W was successfully achieved while maintaining a PAE of over 50% in a 19% relative bandwidth.

High power amplifier technologies for base transceiver stations (BTSs) for the 5th generation (5G) mobile communication systems and so-called beyond 5G (B5G) systems are reviewed. For sub-6, which is categorized into frequency range 1 (FR1) in 5G, wideband Doherty amplifiers are introduced, and a multi-band load modulation amplifier, an envelope tracking amplifier, and a digital power amplifier for B5G are explained. For millimeter wave 5G, which is categorized into frequency range 2 (FR2), GaAs and GaN MMICs operating at around 28GHz are introduced. Finally, future prospect for THz GaN devices is described.

GaN microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) technologies for millimeter-wave (mm-wave) applications are reviewed in this paper. In the mm-wave band, GaN PAs have achieved high-output power as much as traveling wave tube amplifiers used in satellite communications. Additionally, GaN PAs have been integrated enough to be used for 5G and Beyond-5G. In this paper, a high accuracy large-signal GaN-HEMT modeling technique including the trapping effects is introduced in mm-waves. The prototyped PAs designed with the novel modeling technique have achieved RF performance comparable to that of the state-of-the-art GaN PAs in mm-wave.