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Application of Microwave Photoconductivity Decay Method to Characterization of Amorphous In-Ga-Zn-O Films
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Microwave photoconductivity decay (µ-PCD) method was applied to evaluate the effects of chemical composition and Ar+ plasma induced damage on the bulk and the surface states in amorphous In-Ga-Zn-O (a-IGZO) films. It was found that the peak reflectivity signal in the photoconductivity response increased with decreasing the Ga content, and had a strong correlation with the a-IGZO transistor performances. In addition, the peak reflectivity signals obtained after various Ar+ plasma treatment duration were well correlated with the transistor characteristics. With Ar+ plasma treatment, the peak reflectivity signal decreased in accordance with degradation of transistor characteristics. The µ-PCD method was found to be a very useful tool not only to evaluate the bulk and the surface states, but also to predict the performance of a-IGZO transistors subjected to various plasma processes in the production.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.11 pp.1724-1729
- Publication Date
- 2012/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.1724
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Electronic Displays)
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Satoshi YASUNO, Takashi KITA, Shinya MORITA, Aya HINO, Kazushi HAYASHI, Toshihiro KUGIMIYA, Shingo SUMIE, "Application of Microwave Photoconductivity Decay Method to Characterization of Amorphous In-Ga-Zn-O Films" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 11, pp. 1724-1729, November 2012, doi: 10.1587/transele.E95.C.1724.
Abstract: Microwave photoconductivity decay (µ-PCD) method was applied to evaluate the effects of chemical composition and Ar+ plasma induced damage on the bulk and the surface states in amorphous In-Ga-Zn-O (a-IGZO) films. It was found that the peak reflectivity signal in the photoconductivity response increased with decreasing the Ga content, and had a strong correlation with the a-IGZO transistor performances. In addition, the peak reflectivity signals obtained after various Ar+ plasma treatment duration were well correlated with the transistor characteristics. With Ar+ plasma treatment, the peak reflectivity signal decreased in accordance with degradation of transistor characteristics. The µ-PCD method was found to be a very useful tool not only to evaluate the bulk and the surface states, but also to predict the performance of a-IGZO transistors subjected to various plasma processes in the production.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1724/_p
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@ARTICLE{e95-c_11_1724,
author={Satoshi YASUNO, Takashi KITA, Shinya MORITA, Aya HINO, Kazushi HAYASHI, Toshihiro KUGIMIYA, Shingo SUMIE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Application of Microwave Photoconductivity Decay Method to Characterization of Amorphous In-Ga-Zn-O Films},
year={2012},
volume={E95-C},
number={11},
pages={1724-1729},
abstract={Microwave photoconductivity decay (µ-PCD) method was applied to evaluate the effects of chemical composition and Ar+ plasma induced damage on the bulk and the surface states in amorphous In-Ga-Zn-O (a-IGZO) films. It was found that the peak reflectivity signal in the photoconductivity response increased with decreasing the Ga content, and had a strong correlation with the a-IGZO transistor performances. In addition, the peak reflectivity signals obtained after various Ar+ plasma treatment duration were well correlated with the transistor characteristics. With Ar+ plasma treatment, the peak reflectivity signal decreased in accordance with degradation of transistor characteristics. The µ-PCD method was found to be a very useful tool not only to evaluate the bulk and the surface states, but also to predict the performance of a-IGZO transistors subjected to various plasma processes in the production.},
keywords={},
doi={10.1587/transele.E95.C.1724},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - Application of Microwave Photoconductivity Decay Method to Characterization of Amorphous In-Ga-Zn-O Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 1724
EP - 1729
AU - Satoshi YASUNO
AU - Takashi KITA
AU - Shinya MORITA
AU - Aya HINO
AU - Kazushi HAYASHI
AU - Toshihiro KUGIMIYA
AU - Shingo SUMIE
PY - 2012
DO - 10.1587/transele.E95.C.1724
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2012
AB - Microwave photoconductivity decay (µ-PCD) method was applied to evaluate the effects of chemical composition and Ar+ plasma induced damage on the bulk and the surface states in amorphous In-Ga-Zn-O (a-IGZO) films. It was found that the peak reflectivity signal in the photoconductivity response increased with decreasing the Ga content, and had a strong correlation with the a-IGZO transistor performances. In addition, the peak reflectivity signals obtained after various Ar+ plasma treatment duration were well correlated with the transistor characteristics. With Ar+ plasma treatment, the peak reflectivity signal decreased in accordance with degradation of transistor characteristics. The µ-PCD method was found to be a very useful tool not only to evaluate the bulk and the surface states, but also to predict the performance of a-IGZO transistors subjected to various plasma processes in the production.
ER -
English
