IEICE TRANSACTIONS on Electronics
Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode
Summary :
In this paper, we report a reduction in the access resistance of InP/InGaAs composite-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a back-source electrode. The source region has two electrodes. The source electrode on the surface side is connected to the channel through a doped layer and supplies the electrons. The back-source electrode is constructed under the channel layer and is insulated from the doped layer in order to avoid current leakage. The function of the back-source electrode is to increase the carrier concentration in the channel layer of the source region. In the simulation, the electron density in the channel layer is almost doubled by the effect of the back-source voltage. The fabricated III-V MOSFET has a channel length of 6 µm. A 6% increase in the maximum drain current density (Id) and a 6.8% increase in the transconductance (gm) (Vd = 2 V) are observed. The increase in the carrier density in the channel is estimated to be 20% when the applied voltage of the back-source electrode is 6 V.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.5 pp.904-909
- Publication Date
- 2012/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.904
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Atsushi KATO, Toru KANAZAWA, Shunsuke IKEDA, Yoshiharu YONAI, Yasuyuki MIYAMOTO, "Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 5, pp. 904-909, May 2012, doi: 10.1587/transele.E95.C.904.
Abstract: In this paper, we report a reduction in the access resistance of InP/InGaAs composite-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a back-source electrode. The source region has two electrodes. The source electrode on the surface side is connected to the channel through a doped layer and supplies the electrons. The back-source electrode is constructed under the channel layer and is insulated from the doped layer in order to avoid current leakage. The function of the back-source electrode is to increase the carrier concentration in the channel layer of the source region. In the simulation, the electron density in the channel layer is almost doubled by the effect of the back-source voltage. The fabricated III-V MOSFET has a channel length of 6 µm. A 6% increase in the maximum drain current density (Id) and a 6.8% increase in the transconductance (gm) (Vd = 2 V) are observed. The increase in the carrier density in the channel is estimated to be 20% when the applied voltage of the back-source electrode is 6 V.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.904/_p
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@ARTICLE{e95-c_5_904,
author={Atsushi KATO, Toru KANAZAWA, Shunsuke IKEDA, Yoshiharu YONAI, Yasuyuki MIYAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode},
year={2012},
volume={E95-C},
number={5},
pages={904-909},
abstract={In this paper, we report a reduction in the access resistance of InP/InGaAs composite-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a back-source electrode. The source region has two electrodes. The source electrode on the surface side is connected to the channel through a doped layer and supplies the electrons. The back-source electrode is constructed under the channel layer and is insulated from the doped layer in order to avoid current leakage. The function of the back-source electrode is to increase the carrier concentration in the channel layer of the source region. In the simulation, the electron density in the channel layer is almost doubled by the effect of the back-source voltage. The fabricated III-V MOSFET has a channel length of 6 µm. A 6% increase in the maximum drain current density (Id) and a 6.8% increase in the transconductance (gm) (Vd = 2 V) are observed. The increase in the carrier density in the channel is estimated to be 20% when the applied voltage of the back-source electrode is 6 V.},
keywords={},
doi={10.1587/transele.E95.C.904},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode
T2 - IEICE TRANSACTIONS on Electronics
SP - 904
EP - 909
AU - Atsushi KATO
AU - Toru KANAZAWA
AU - Shunsuke IKEDA
AU - Yoshiharu YONAI
AU - Yasuyuki MIYAMOTO
PY - 2012
DO - 10.1587/transele.E95.C.904
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2012
AB - In this paper, we report a reduction in the access resistance of InP/InGaAs composite-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a back-source electrode. The source region has two electrodes. The source electrode on the surface side is connected to the channel through a doped layer and supplies the electrons. The back-source electrode is constructed under the channel layer and is insulated from the doped layer in order to avoid current leakage. The function of the back-source electrode is to increase the carrier concentration in the channel layer of the source region. In the simulation, the electron density in the channel layer is almost doubled by the effect of the back-source voltage. The fabricated III-V MOSFET has a channel length of 6 µm. A 6% increase in the maximum drain current density (Id) and a 6.8% increase in the transconductance (gm) (Vd = 2 V) are observed. The increase in the carrier density in the channel is estimated to be 20% when the applied voltage of the back-source electrode is 6 V.
ER -
English
