IEICE TRANSACTIONS on Electronics
A 60 GHz Power Amplifier with 10 GHz 1-dB Bandwidth and 13.6% PAE in 65 nm CMOS
Summary :
A four-stage power amplifier (PA) with 10 GHz 1-dB bandwidth (56–66 GHz) is presented. The broadband performance is achieved owing to π-section interstage matching network. Three-stage-current-reuse topology is proposed to enhance efficiency. The amplifier has been fabricated in 65 nm digital CMOS. 18 dB power gain and 9.6 dBm saturated power (Psat) are achieved at 60 GHz. The PA consumes current of 50 mA at 1.2 V supply voltage, and has a peak power-added efficiency (PAE) of 13.6%. To the best of the authors' knowledge, this work shows the highest PAE among the reported CMOS PAs that covers the worldwide 9 GHz ISM millimeter-wave band with less-than-1.2 V supply voltage.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E96-C No.6 pp.796-803
- Publication Date
- 2013/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E96.C.796
- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
- Category
Authors
Tong WANG
Toshiba Corporation
Toshiya MITOMO
Toshiba Corporation
Naoko ONO
Toshiba Corporation
Shigehito SAIGUSA
Toshiba Corporation
Osamu WATANABE
Toshiba Corporation
Keyword
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Tong WANG, Toshiya MITOMO, Naoko ONO, Shigehito SAIGUSA, Osamu WATANABE, "A 60 GHz Power Amplifier with 10 GHz 1-dB Bandwidth and 13.6% PAE in 65 nm CMOS" in IEICE TRANSACTIONS on Electronics,
vol. E96-C, no. 6, pp. 796-803, June 2013, doi: 10.1587/transele.E96.C.796.
Abstract: A four-stage power amplifier (PA) with 10 GHz 1-dB bandwidth (56–66 GHz) is presented. The broadband performance is achieved owing to π-section interstage matching network. Three-stage-current-reuse topology is proposed to enhance efficiency. The amplifier has been fabricated in 65 nm digital CMOS. 18 dB power gain and 9.6 dBm saturated power (Psat) are achieved at 60 GHz. The PA consumes current of 50 mA at 1.2 V supply voltage, and has a peak power-added efficiency (PAE) of 13.6%. To the best of the authors' knowledge, this work shows the highest PAE among the reported CMOS PAs that covers the worldwide 9 GHz ISM millimeter-wave band with less-than-1.2 V supply voltage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.796/_p
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@ARTICLE{e96-c_6_796,
author={Tong WANG, Toshiya MITOMO, Naoko ONO, Shigehito SAIGUSA, Osamu WATANABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 60 GHz Power Amplifier with 10 GHz 1-dB Bandwidth and 13.6% PAE in 65 nm CMOS},
year={2013},
volume={E96-C},
number={6},
pages={796-803},
abstract={A four-stage power amplifier (PA) with 10 GHz 1-dB bandwidth (56–66 GHz) is presented. The broadband performance is achieved owing to π-section interstage matching network. Three-stage-current-reuse topology is proposed to enhance efficiency. The amplifier has been fabricated in 65 nm digital CMOS. 18 dB power gain and 9.6 dBm saturated power (Psat) are achieved at 60 GHz. The PA consumes current of 50 mA at 1.2 V supply voltage, and has a peak power-added efficiency (PAE) of 13.6%. To the best of the authors' knowledge, this work shows the highest PAE among the reported CMOS PAs that covers the worldwide 9 GHz ISM millimeter-wave band with less-than-1.2 V supply voltage.},
keywords={},
doi={10.1587/transele.E96.C.796},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - A 60 GHz Power Amplifier with 10 GHz 1-dB Bandwidth and 13.6% PAE in 65 nm CMOS
T2 - IEICE TRANSACTIONS on Electronics
SP - 796
EP - 803
AU - Tong WANG
AU - Toshiya MITOMO
AU - Naoko ONO
AU - Shigehito SAIGUSA
AU - Osamu WATANABE
PY - 2013
DO - 10.1587/transele.E96.C.796
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2013
AB - A four-stage power amplifier (PA) with 10 GHz 1-dB bandwidth (56–66 GHz) is presented. The broadband performance is achieved owing to π-section interstage matching network. Three-stage-current-reuse topology is proposed to enhance efficiency. The amplifier has been fabricated in 65 nm digital CMOS. 18 dB power gain and 9.6 dBm saturated power (Psat) are achieved at 60 GHz. The PA consumes current of 50 mA at 1.2 V supply voltage, and has a peak power-added efficiency (PAE) of 13.6%. To the best of the authors' knowledge, this work shows the highest PAE among the reported CMOS PAs that covers the worldwide 9 GHz ISM millimeter-wave band with less-than-1.2 V supply voltage.
ER -
English
