A photovoltaic (PV)-assisted CMOS rectifier was developed for efficient energy harvesting from ambient radio waves as one example of the synergistic energy harvesting concept. The rectifier operates truly synergistically. A pn junction diode acting as a PV cell converts light energy to DC bias voltage, which compensates the threshold voltage (Vth) of the MOSFETs and enhances the radio frequency (RF) to DC power conversion efficiency (PCE) of the rectifier even under extremely low input power conditions. The indoor illuminance level was sufficient to generate gate bias voltages to compensate Vths. Although the same PV cell structure for biasing nMOS and pMOS transistors was used, photo-generated bias voltages were found to become unbalanced due to the two-layered pn junction structures and parasitic bipolar transistor action. Under typical indoor lighting conditions, a fabricated PV-assisted rectifier achieved a PCE greater than 20% at an RF input power of -20dBm, a frequency of 920MHz, and an output load of 47kΩ. This PCE value is twice the value obtained by a conventional rectifier without PV assistance. In addition, it was experimentally revealed that if symmetric biasing voltages for nMOS and pMOS transistors were available, the PCE would increase even further.
Koji KOTANI
Tohoku University
Takumi BANDO
Tohoku University
Yuki SASAKI
Tohoku University
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Koji KOTANI, Takumi BANDO, Yuki SASAKI, "A Photovoltaic-Assisted CMOS Rectifier for Synergistic Energy Harvesting from Ambient Radio Waves" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 4, pp. 245-252, April 2014, doi: 10.1587/transele.E97.C.245.
Abstract: A photovoltaic (PV)-assisted CMOS rectifier was developed for efficient energy harvesting from ambient radio waves as one example of the synergistic energy harvesting concept. The rectifier operates truly synergistically. A pn junction diode acting as a PV cell converts light energy to DC bias voltage, which compensates the threshold voltage (Vth) of the MOSFETs and enhances the radio frequency (RF) to DC power conversion efficiency (PCE) of the rectifier even under extremely low input power conditions. The indoor illuminance level was sufficient to generate gate bias voltages to compensate Vths. Although the same PV cell structure for biasing nMOS and pMOS transistors was used, photo-generated bias voltages were found to become unbalanced due to the two-layered pn junction structures and parasitic bipolar transistor action. Under typical indoor lighting conditions, a fabricated PV-assisted rectifier achieved a PCE greater than 20% at an RF input power of -20dBm, a frequency of 920MHz, and an output load of 47kΩ. This PCE value is twice the value obtained by a conventional rectifier without PV assistance. In addition, it was experimentally revealed that if symmetric biasing voltages for nMOS and pMOS transistors were available, the PCE would increase even further.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.245/_p
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@ARTICLE{e97-c_4_245,
author={Koji KOTANI, Takumi BANDO, Yuki SASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Photovoltaic-Assisted CMOS Rectifier for Synergistic Energy Harvesting from Ambient Radio Waves},
year={2014},
volume={E97-C},
number={4},
pages={245-252},
abstract={A photovoltaic (PV)-assisted CMOS rectifier was developed for efficient energy harvesting from ambient radio waves as one example of the synergistic energy harvesting concept. The rectifier operates truly synergistically. A pn junction diode acting as a PV cell converts light energy to DC bias voltage, which compensates the threshold voltage (Vth) of the MOSFETs and enhances the radio frequency (RF) to DC power conversion efficiency (PCE) of the rectifier even under extremely low input power conditions. The indoor illuminance level was sufficient to generate gate bias voltages to compensate Vths. Although the same PV cell structure for biasing nMOS and pMOS transistors was used, photo-generated bias voltages were found to become unbalanced due to the two-layered pn junction structures and parasitic bipolar transistor action. Under typical indoor lighting conditions, a fabricated PV-assisted rectifier achieved a PCE greater than 20% at an RF input power of -20dBm, a frequency of 920MHz, and an output load of 47kΩ. This PCE value is twice the value obtained by a conventional rectifier without PV assistance. In addition, it was experimentally revealed that if symmetric biasing voltages for nMOS and pMOS transistors were available, the PCE would increase even further.},
keywords={},
doi={10.1587/transele.E97.C.245},
ISSN={1745-1353},
month={April},}
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TY - JOUR
TI - A Photovoltaic-Assisted CMOS Rectifier for Synergistic Energy Harvesting from Ambient Radio Waves
T2 - IEICE TRANSACTIONS on Electronics
SP - 245
EP - 252
AU - Koji KOTANI
AU - Takumi BANDO
AU - Yuki SASAKI
PY - 2014
DO - 10.1587/transele.E97.C.245
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2014
AB - A photovoltaic (PV)-assisted CMOS rectifier was developed for efficient energy harvesting from ambient radio waves as one example of the synergistic energy harvesting concept. The rectifier operates truly synergistically. A pn junction diode acting as a PV cell converts light energy to DC bias voltage, which compensates the threshold voltage (Vth) of the MOSFETs and enhances the radio frequency (RF) to DC power conversion efficiency (PCE) of the rectifier even under extremely low input power conditions. The indoor illuminance level was sufficient to generate gate bias voltages to compensate Vths. Although the same PV cell structure for biasing nMOS and pMOS transistors was used, photo-generated bias voltages were found to become unbalanced due to the two-layered pn junction structures and parasitic bipolar transistor action. Under typical indoor lighting conditions, a fabricated PV-assisted rectifier achieved a PCE greater than 20% at an RF input power of -20dBm, a frequency of 920MHz, and an output load of 47kΩ. This PCE value is twice the value obtained by a conventional rectifier without PV assistance. In addition, it was experimentally revealed that if symmetric biasing voltages for nMOS and pMOS transistors were available, the PCE would increase even further.
ER -