IEICE TRANSACTIONS on Electronics
Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance
Summary :
The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (rs), the value of rs is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τs depends on the current in a way similar to rs. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter rs than a Si MOSFET.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.5 pp.419-422
- Publication Date
- 2014/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.419
- Type of Manuscript
- BRIEF PAPER
- Category
Authors
Masayuki YAMADA
Tokyo Institute of Technology
Ken UCHIDA
Keio University
Yasuyuki MIYAMOTO
Tokyo Institute of Technology
Keyword
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Masayuki YAMADA, Ken UCHIDA, Yasuyuki MIYAMOTO, "Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 5, pp. 419-422, May 2014, doi: 10.1587/transele.E97.C.419.
Abstract: The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (rs), the value of rs is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τs depends on the current in a way similar to rs. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter rs than a Si MOSFET.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.419/_p
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@ARTICLE{e97-c_5_419,
author={Masayuki YAMADA, Ken UCHIDA, Yasuyuki MIYAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance},
year={2014},
volume={E97-C},
number={5},
pages={419-422},
abstract={The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (rs), the value of rs is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τs depends on the current in a way similar to rs. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter rs than a Si MOSFET.},
keywords={},
doi={10.1587/transele.E97.C.419},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance
T2 - IEICE TRANSACTIONS on Electronics
SP - 419
EP - 422
AU - Masayuki YAMADA
AU - Ken UCHIDA
AU - Yasuyuki MIYAMOTO
PY - 2014
DO - 10.1587/transele.E97.C.419
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2014
AB - The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (rs), the value of rs is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τs depends on the current in a way similar to rs. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter rs than a Si MOSFET.
ER -
English
