IEICE TRANSACTIONS on Electronics
Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18µm CMOS Process for High-Speed Operation
Summary :
nMOS-type and pMOS-type silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and the current-voltage characteristic and the frequency response of the APDs with and without guard ring structure were measured. The role of the guard ring is cancellation of photo-generated carriers in a deep layer and a substrate. The bandwidth of the APD is enhanced with the guard ring structure at a sacrifice of the responsivity. Based on comparison of nMOS-type and pMOS-type APDs, the nMOS-type APD is more suitable for high-speed operation. The bandwidth is enhanced with decreasing the spacing of interdigital electrodes due to decreased carrier transit time and with decreasing the detection area and the PAD size for RF probing due to decreased device capacitance. The maximum bandwidth was achieved with the avalanche gain of about 10. Finally, we fabricated a nMOS-type APD with the electrode spacing of 0.84µm, the detection area of 10×10µm2, the PAD size for RF probing of 30×30µm2, and with the guard ring structure. The maximum bandwidth of 8.4GHz was achieved along with the gain-bandwidth product of 280GHz.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.12 pp.1304-1311
- Publication Date
- 2016/12/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.1304
- Type of Manuscript
- PAPER
- Category
- Lasers, Quantum Electronics
Authors
Zul Atfyi Fauzan Mohammed NAPIAH
Universiti Teknikal Malaysia Melaka (UTeM),Kanazawa University
Ryoichi GYOBU
Kanazawa University
Takuya HISHIKI
Kanazawa University
Takeo MARUYAMA
Kanazawa University
Koichi IIYAMA
Kanazawa University
Keyword
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Zul Atfyi Fauzan Mohammed NAPIAH, Ryoichi GYOBU, Takuya HISHIKI, Takeo MARUYAMA, Koichi IIYAMA, "Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18µm CMOS Process for High-Speed Operation" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 12, pp. 1304-1311, December 2016, doi: 10.1587/transele.E99.C.1304.
Abstract: nMOS-type and pMOS-type silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and the current-voltage characteristic and the frequency response of the APDs with and without guard ring structure were measured. The role of the guard ring is cancellation of photo-generated carriers in a deep layer and a substrate. The bandwidth of the APD is enhanced with the guard ring structure at a sacrifice of the responsivity. Based on comparison of nMOS-type and pMOS-type APDs, the nMOS-type APD is more suitable for high-speed operation. The bandwidth is enhanced with decreasing the spacing of interdigital electrodes due to decreased carrier transit time and with decreasing the detection area and the PAD size for RF probing due to decreased device capacitance. The maximum bandwidth was achieved with the avalanche gain of about 10. Finally, we fabricated a nMOS-type APD with the electrode spacing of 0.84µm, the detection area of 10×10µm2, the PAD size for RF probing of 30×30µm2, and with the guard ring structure. The maximum bandwidth of 8.4GHz was achieved along with the gain-bandwidth product of 280GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.1304/_p
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@ARTICLE{e99-c_12_1304,
author={Zul Atfyi Fauzan Mohammed NAPIAH, Ryoichi GYOBU, Takuya HISHIKI, Takeo MARUYAMA, Koichi IIYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18µm CMOS Process for High-Speed Operation},
year={2016},
volume={E99-C},
number={12},
pages={1304-1311},
abstract={nMOS-type and pMOS-type silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and the current-voltage characteristic and the frequency response of the APDs with and without guard ring structure were measured. The role of the guard ring is cancellation of photo-generated carriers in a deep layer and a substrate. The bandwidth of the APD is enhanced with the guard ring structure at a sacrifice of the responsivity. Based on comparison of nMOS-type and pMOS-type APDs, the nMOS-type APD is more suitable for high-speed operation. The bandwidth is enhanced with decreasing the spacing of interdigital electrodes due to decreased carrier transit time and with decreasing the detection area and the PAD size for RF probing due to decreased device capacitance. The maximum bandwidth was achieved with the avalanche gain of about 10. Finally, we fabricated a nMOS-type APD with the electrode spacing of 0.84µm, the detection area of 10×10µm2, the PAD size for RF probing of 30×30µm2, and with the guard ring structure. The maximum bandwidth of 8.4GHz was achieved along with the gain-bandwidth product of 280GHz.},
keywords={},
doi={10.1587/transele.E99.C.1304},
ISSN={1745-1353},
month={December},}
Copy
TY - JOUR
TI - Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18µm CMOS Process for High-Speed Operation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1304
EP - 1311
AU - Zul Atfyi Fauzan Mohammed NAPIAH
AU - Ryoichi GYOBU
AU - Takuya HISHIKI
AU - Takeo MARUYAMA
AU - Koichi IIYAMA
PY - 2016
DO - 10.1587/transele.E99.C.1304
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2016
AB - nMOS-type and pMOS-type silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and the current-voltage characteristic and the frequency response of the APDs with and without guard ring structure were measured. The role of the guard ring is cancellation of photo-generated carriers in a deep layer and a substrate. The bandwidth of the APD is enhanced with the guard ring structure at a sacrifice of the responsivity. Based on comparison of nMOS-type and pMOS-type APDs, the nMOS-type APD is more suitable for high-speed operation. The bandwidth is enhanced with decreasing the spacing of interdigital electrodes due to decreased carrier transit time and with decreasing the detection area and the PAD size for RF probing due to decreased device capacitance. The maximum bandwidth was achieved with the avalanche gain of about 10. Finally, we fabricated a nMOS-type APD with the electrode spacing of 0.84µm, the detection area of 10×10µm2, the PAD size for RF probing of 30×30µm2, and with the guard ring structure. The maximum bandwidth of 8.4GHz was achieved along with the gain-bandwidth product of 280GHz.
ER -
English
