IEICE TRANSACTIONS on Fundamentals
High-Frequency Device-Modeling Techniques for RF-CMOS Circuits
Summary :
Simple and scalable device-modeling techniques for inductors and capacitors are described. All model parameters are calculated from geometric parameters of the device, process parameters of the technology, and a substrate resistance parameter. Modeling techniques for other devices, such as resistors, varactor diodes, pads and MOSFETs, are also described. Some simulation results using the proposed device-modeling techniques are compared with measured results and they indicate adequacy of the proposed device-modeling techniques.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E84-A No.2 pp.520-528
- Publication Date
- 2001/02/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
- Category
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Ryuichi FUJIMOTO, Osamu WATANABE, Fumie FUJII, Hideyuki KAWAKITA, Hiroshi TANIMOTO, "High-Frequency Device-Modeling Techniques for RF-CMOS Circuits" in IEICE TRANSACTIONS on Fundamentals,
vol. E84-A, no. 2, pp. 520-528, February 2001, doi: .
Abstract: Simple and scalable device-modeling techniques for inductors and capacitors are described. All model parameters are calculated from geometric parameters of the device, process parameters of the technology, and a substrate resistance parameter. Modeling techniques for other devices, such as resistors, varactor diodes, pads and MOSFETs, are also described. Some simulation results using the proposed device-modeling techniques are compared with measured results and they indicate adequacy of the proposed device-modeling techniques.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e84-a_2_520/_p
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@ARTICLE{e84-a_2_520,
author={Ryuichi FUJIMOTO, Osamu WATANABE, Fumie FUJII, Hideyuki KAWAKITA, Hiroshi TANIMOTO, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={High-Frequency Device-Modeling Techniques for RF-CMOS Circuits},
year={2001},
volume={E84-A},
number={2},
pages={520-528},
abstract={Simple and scalable device-modeling techniques for inductors and capacitors are described. All model parameters are calculated from geometric parameters of the device, process parameters of the technology, and a substrate resistance parameter. Modeling techniques for other devices, such as resistors, varactor diodes, pads and MOSFETs, are also described. Some simulation results using the proposed device-modeling techniques are compared with measured results and they indicate adequacy of the proposed device-modeling techniques.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - High-Frequency Device-Modeling Techniques for RF-CMOS Circuits
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 520
EP - 528
AU - Ryuichi FUJIMOTO
AU - Osamu WATANABE
AU - Fumie FUJII
AU - Hideyuki KAWAKITA
AU - Hiroshi TANIMOTO
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E84-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2001
AB - Simple and scalable device-modeling techniques for inductors and capacitors are described. All model parameters are calculated from geometric parameters of the device, process parameters of the technology, and a substrate resistance parameter. Modeling techniques for other devices, such as resistors, varactor diodes, pads and MOSFETs, are also described. Some simulation results using the proposed device-modeling techniques are compared with measured results and they indicate adequacy of the proposed device-modeling techniques.
ER -
English
