Drain Current Zero-Temperature-Coefficient Point for CMOS Temperature-Voltage Converter Operating in Strong Inversion
Summary :
Temperature dependence of drain current is analyzed in detail in terms of mobility and threshold voltage. From the analyses, it is proved that a point exists that the drain current is fixed without depending on temperature when the MOSFET operates in strong inversion. Applying this characteristic, a CMOS temperature-voltage converter operating in strong inversion with high linearity is proposed. SPICE simulation and experimental results are shown, and the corresponding performances are discussed.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E87-A No.2 pp.370-375
- Publication Date
- 2004/02/01
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
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Hidetoshi IKEDA, Kawori TAKAKUBO, Hajime TAKAKUBO, "Drain Current Zero-Temperature-Coefficient Point for CMOS Temperature-Voltage Converter Operating in Strong Inversion" in IEICE TRANSACTIONS on Fundamentals,
vol. E87-A, no. 2, pp. 370-375, February 2004, doi: .
Abstract: Temperature dependence of drain current is analyzed in detail in terms of mobility and threshold voltage. From the analyses, it is proved that a point exists that the drain current is fixed without depending on temperature when the MOSFET operates in strong inversion. Applying this characteristic, a CMOS temperature-voltage converter operating in strong inversion with high linearity is proposed. SPICE simulation and experimental results are shown, and the corresponding performances are discussed.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e87-a_2_370/_p
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@ARTICLE{e87-a_2_370,
author={Hidetoshi IKEDA, Kawori TAKAKUBO, Hajime TAKAKUBO, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Drain Current Zero-Temperature-Coefficient Point for CMOS Temperature-Voltage Converter Operating in Strong Inversion},
year={2004},
volume={E87-A},
number={2},
pages={370-375},
abstract={Temperature dependence of drain current is analyzed in detail in terms of mobility and threshold voltage. From the analyses, it is proved that a point exists that the drain current is fixed without depending on temperature when the MOSFET operates in strong inversion. Applying this characteristic, a CMOS temperature-voltage converter operating in strong inversion with high linearity is proposed. SPICE simulation and experimental results are shown, and the corresponding performances are discussed.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Drain Current Zero-Temperature-Coefficient Point for CMOS Temperature-Voltage Converter Operating in Strong Inversion
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 370
EP - 375
AU - Hidetoshi IKEDA
AU - Kawori TAKAKUBO
AU - Hajime TAKAKUBO
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E87-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2004
AB - Temperature dependence of drain current is analyzed in detail in terms of mobility and threshold voltage. From the analyses, it is proved that a point exists that the drain current is fixed without depending on temperature when the MOSFET operates in strong inversion. Applying this characteristic, a CMOS temperature-voltage converter operating in strong inversion with high linearity is proposed. SPICE simulation and experimental results are shown, and the corresponding performances are discussed.
ER -
English
