IEICE TRANSACTIONS on Fundamentals
Tunable CMOS Power Amplifiers for Reconfigurable Transceivers
Summary :
This paper presents three CMOS power amplifiers (PA) which realize wide-tunable output impedance matching. For realization of multi-standard and single-chip transceiver, the prototypes were fabricated by 0.18 µm CMOS process. The proposed PAs can achieve a tunable impedance matching within a wide frequency range by utilizing a resistive feedback and parallel resonator with an inductor and capacitor array. Therefore, the proposed PA has a realization possibility of isolator-less PA which contributes to decrease die area including external component. In other words, the PAs have tunable impedance matching function at their output ends. With a 3.3-V supply, three power amplifiers can cover frequency ranges of 0.9–3.0 GHz, 2.1–5.8 GHz, and 5.7–9.7 GHz, respectively. The PAs realize P1 dB of 21 dBm, Psat of 22 dBm, and PAEpeak of larger than 23%. The proposed PAs present a potential to realize multi-band transceivers without isolators.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E94-A No.11 pp.2394-2401
- Publication Date
- 2011/11/01
- Publicized
- Online ISSN
- 1745-1337
- DOI
- 10.1587/transfun.E94.A.2394
- Type of Manuscript
- PAPER
- Category
- Circuit Theory
Authors
Keyword
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JeeYoung HONG, Daisuke IMANISHI, Kenichi OKADA, Akira MATSUZAWA, "Tunable CMOS Power Amplifiers for Reconfigurable Transceivers" in IEICE TRANSACTIONS on Fundamentals,
vol. E94-A, no. 11, pp. 2394-2401, November 2011, doi: 10.1587/transfun.E94.A.2394.
Abstract: This paper presents three CMOS power amplifiers (PA) which realize wide-tunable output impedance matching. For realization of multi-standard and single-chip transceiver, the prototypes were fabricated by 0.18 µm CMOS process. The proposed PAs can achieve a tunable impedance matching within a wide frequency range by utilizing a resistive feedback and parallel resonator with an inductor and capacitor array. Therefore, the proposed PA has a realization possibility of isolator-less PA which contributes to decrease die area including external component. In other words, the PAs have tunable impedance matching function at their output ends. With a 3.3-V supply, three power amplifiers can cover frequency ranges of 0.9–3.0 GHz, 2.1–5.8 GHz, and 5.7–9.7 GHz, respectively. The PAs realize P1 dB of 21 dBm, Psat of 22 dBm, and PAEpeak of larger than 23%. The proposed PAs present a potential to realize multi-band transceivers without isolators.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.E94.A.2394/_p
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@ARTICLE{e94-a_11_2394,
author={JeeYoung HONG, Daisuke IMANISHI, Kenichi OKADA, Akira MATSUZAWA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Tunable CMOS Power Amplifiers for Reconfigurable Transceivers},
year={2011},
volume={E94-A},
number={11},
pages={2394-2401},
abstract={This paper presents three CMOS power amplifiers (PA) which realize wide-tunable output impedance matching. For realization of multi-standard and single-chip transceiver, the prototypes were fabricated by 0.18 µm CMOS process. The proposed PAs can achieve a tunable impedance matching within a wide frequency range by utilizing a resistive feedback and parallel resonator with an inductor and capacitor array. Therefore, the proposed PA has a realization possibility of isolator-less PA which contributes to decrease die area including external component. In other words, the PAs have tunable impedance matching function at their output ends. With a 3.3-V supply, three power amplifiers can cover frequency ranges of 0.9–3.0 GHz, 2.1–5.8 GHz, and 5.7–9.7 GHz, respectively. The PAs realize P1 dB of 21 dBm, Psat of 22 dBm, and PAEpeak of larger than 23%. The proposed PAs present a potential to realize multi-band transceivers without isolators.},
keywords={},
doi={10.1587/transfun.E94.A.2394},
ISSN={1745-1337},
month={November},}
Copy
TY - JOUR
TI - Tunable CMOS Power Amplifiers for Reconfigurable Transceivers
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 2394
EP - 2401
AU - JeeYoung HONG
AU - Daisuke IMANISHI
AU - Kenichi OKADA
AU - Akira MATSUZAWA
PY - 2011
DO - 10.1587/transfun.E94.A.2394
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E94-A
IS - 11
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - November 2011
AB - This paper presents three CMOS power amplifiers (PA) which realize wide-tunable output impedance matching. For realization of multi-standard and single-chip transceiver, the prototypes were fabricated by 0.18 µm CMOS process. The proposed PAs can achieve a tunable impedance matching within a wide frequency range by utilizing a resistive feedback and parallel resonator with an inductor and capacitor array. Therefore, the proposed PA has a realization possibility of isolator-less PA which contributes to decrease die area including external component. In other words, the PAs have tunable impedance matching function at their output ends. With a 3.3-V supply, three power amplifiers can cover frequency ranges of 0.9–3.0 GHz, 2.1–5.8 GHz, and 5.7–9.7 GHz, respectively. The PAs realize P1 dB of 21 dBm, Psat of 22 dBm, and PAEpeak of larger than 23%. The proposed PAs present a potential to realize multi-band transceivers without isolators.
ER -
English
