OMVPE Grown GaInAsP/InP BH Laser on p-Type Substrate
Summary :
Fabrication of 1.5 µm GaInAsP/InP laser by OMVPE on p-type substrate is reported. Low threshold current density (1.2 kA/cm2) was obtained by reduction of growth time in order to prevent Zn diffusion from substrate. CW operations at room temperature were obtained in buried heterostructure (BH) devices fabricated by OMVPE-LPE hybrid growth method. No degradation was observed after 2000 hours' aging test.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E68-E No.12 pp.796-797
- Publication Date
- 1985/12/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Optical and Quantum Electronics
Authors
Yasuyuki MIYAMOTO
Chiaki WATANABE
Masashi NAGASHIMA
Kazuhito FURUYA
Yasuharu SUEMATSU
Yuichi TOHMORI
Shigehisa ARAI
Keyword
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Yasuyuki MIYAMOTO, Chiaki WATANABE, Masashi NAGASHIMA, Kazuhito FURUYA, Yasuharu SUEMATSU, Yuichi TOHMORI, Shigehisa ARAI, "OMVPE Grown GaInAsP/InP BH Laser on p-Type Substrate" in IEICE TRANSACTIONS on transactions,
vol. E68-E, no. 12, pp. 796-797, December 1985, doi: .
Abstract: Fabrication of 1.5 µm GaInAsP/InP laser by OMVPE on p-type substrate is reported. Low threshold current density (1.2 kA/cm2) was obtained by reduction of growth time in order to prevent Zn diffusion from substrate. CW operations at room temperature were obtained in buried heterostructure (BH) devices fabricated by OMVPE-LPE hybrid growth method. No degradation was observed after 2000 hours' aging test.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e68-e_12_796/_p
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@ARTICLE{e68-e_12_796,
author={Yasuyuki MIYAMOTO, Chiaki WATANABE, Masashi NAGASHIMA, Kazuhito FURUYA, Yasuharu SUEMATSU, Yuichi TOHMORI, Shigehisa ARAI, },
journal={IEICE TRANSACTIONS on transactions},
title={OMVPE Grown GaInAsP/InP BH Laser on p-Type Substrate},
year={1985},
volume={E68-E},
number={12},
pages={796-797},
abstract={Fabrication of 1.5 µm GaInAsP/InP laser by OMVPE on p-type substrate is reported. Low threshold current density (1.2 kA/cm2) was obtained by reduction of growth time in order to prevent Zn diffusion from substrate. CW operations at room temperature were obtained in buried heterostructure (BH) devices fabricated by OMVPE-LPE hybrid growth method. No degradation was observed after 2000 hours' aging test.},
keywords={},
doi={},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - OMVPE Grown GaInAsP/InP BH Laser on p-Type Substrate
T2 - IEICE TRANSACTIONS on transactions
SP - 796
EP - 797
AU - Yasuyuki MIYAMOTO
AU - Chiaki WATANABE
AU - Masashi NAGASHIMA
AU - Kazuhito FURUYA
AU - Yasuharu SUEMATSU
AU - Yuichi TOHMORI
AU - Shigehisa ARAI
PY - 1985
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E68-E
IS - 12
JA - IEICE TRANSACTIONS on transactions
Y1 - December 1985
AB - Fabrication of 1.5 µm GaInAsP/InP laser by OMVPE on p-type substrate is reported. Low threshold current density (1.2 kA/cm2) was obtained by reduction of growth time in order to prevent Zn diffusion from substrate. CW operations at room temperature were obtained in buried heterostructure (BH) devices fabricated by OMVPE-LPE hybrid growth method. No degradation was observed after 2000 hours' aging test.
ER -
English
