Fabrication of 1.5 µm GaInAsP/InP laser by OMVPE on p-type substrate is reported. Low threshold current density (1.2 kA/cm2) was obtained by reduction of growth time in order to prevent Zn diffusion from substrate. CW operations at room temperature were obtained in buried heterostructure (BH) devices fabricated by OMVPE-LPE hybrid growth method. No degradation was observed after 2000 hours' aging test.

1.55µm GaInAsP/InP BH lasers with multiple p-n current blocking layer were fabricated entirely by low-pressure OMVPE. The undercut portions were filled in a manner similar to mass transport process. The laser shows a threshold current of 48 mA at 300 K under CW operation.

Gain and loss coefficients were determined for GaInAsP/InP (λg1.5 µm) grown by OMVPE from lasing characteristics. Crystal quality of OMVPE GaInAsP/InP was found to be substantially the same as those grown be LPE. Absorption losses of the quaternary active and the binary InP layers were estimated separately.

Fabrication of GaInAsP/InP heterostructure lasers for 1.5 µm wavelength region by organometallic vapor phase epitaxy are discussed. Results of growth conditions, which were experimentally found important to obtain the low threshold current density (1 kA/cm2) comparable with LPE at 1.5 µm lasing oscillation are reported, such as gas switching at hetero-interfaces, maintenance of constant temperature over the growth of all layers, selection of carrier gas and doping conditions. Furthermore, OMVPE device techniques for buried heterostructure laser operating at CW condition are described. Fabrications and characterization of quantum well structure are also reported.

Mass transport was first employed in an OMVPE system for 1.55 µm GaInAsP/InP laser. The wafers grown by OMVPE were treated at 700 under cracked PH3 and H2+N2 atmosphere for 1 hr, resulting in buried structure and the BH laser showed low threshold current of 50 mA (pulsed) without optimization.