IEICE TRANSACTIONS on transactions
Mass Transported 1.55µm GaInAsP/InP BH Laser Grown by OMVPE
Summary :
Mass transport was first employed in an OMVPE system for 1.55 µm GaInAsP/InP laser. The wafers grown by OMVPE were treated at 700
- Publication
- IEICE TRANSACTIONS on transactions Vol.E68-E No.9 pp.563-565
- Publication Date
- 1985/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Optical and Quantum Electronics
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Keyword
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Masashi NAGASHIMA, Yasuyuki MIYAMOTO, Kazuhito FURUYA, Yasuharu SUEMATSU, Chiaki WATANABE, Shu-ren YANG, "Mass Transported 1.55µm GaInAsP/InP BH Laser Grown by OMVPE" in IEICE TRANSACTIONS on transactions,
vol. E68-E, no. 9, pp. 563-565, September 1985, doi: .
Abstract: Mass transport was first employed in an OMVPE system for 1.55 µm GaInAsP/InP laser. The wafers grown by OMVPE were treated at 700
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e68-e_9_563/_p
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@ARTICLE{e68-e_9_563,
author={Masashi NAGASHIMA, Yasuyuki MIYAMOTO, Kazuhito FURUYA, Yasuharu SUEMATSU, Chiaki WATANABE, Shu-ren YANG, },
journal={IEICE TRANSACTIONS on transactions},
title={Mass Transported 1.55µm GaInAsP/InP BH Laser Grown by OMVPE},
year={1985},
volume={E68-E},
number={9},
pages={563-565},
abstract={Mass transport was first employed in an OMVPE system for 1.55 µm GaInAsP/InP laser. The wafers grown by OMVPE were treated at 700
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - Mass Transported 1.55µm GaInAsP/InP BH Laser Grown by OMVPE
T2 - IEICE TRANSACTIONS on transactions
SP - 563
EP - 565
AU - Masashi NAGASHIMA
AU - Yasuyuki MIYAMOTO
AU - Kazuhito FURUYA
AU - Yasuharu SUEMATSU
AU - Chiaki WATANABE
AU - Shu-ren YANG
PY - 1985
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E68-E
IS - 9
JA - IEICE TRANSACTIONS on transactions
Y1 - September 1985
AB - Mass transport was first employed in an OMVPE system for 1.55 µm GaInAsP/InP laser. The wafers grown by OMVPE were treated at 700
ER -
English
