Mass transport was first employed in an OMVPE system for 1.55 µm GaInAsP/InP laser. The wafers grown by OMVPE were treated at 700 under cracked PH3 and H2+N2 atmosphere for 1 hr, resulting in buried structure and the BH laser showed low threshold current of 50 mA (pulsed) without optimization.

Gain and loss coefficients were determined for GaInAsP/InP (λg1.5 µm) grown by OMVPE from lasing characteristics. Crystal quality of OMVPE GaInAsP/InP was found to be substantially the same as those grown be LPE. Absorption losses of the quaternary active and the binary InP layers were estimated separately.