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Gain and Loss of GaInAsP/InP (λg1.5µm) Grown by OMVPE Estimated from Lasing Characteristics

Shu-ren YANG, Yasuyuki MIYAMOTO, Chiaki WATANABE, Masashi NAGASHIMA, Kazuhito FURUYA, Yasuharu SUEMATSU

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Summary :

Gain and loss coefficients were determined for GaInAsP/InP (λg1.5 µm) grown by OMVPE from lasing characteristics. Crystal quality of OMVPE GaInAsP/InP was found to be substantially the same as those grown be LPE. Absorption losses of the quaternary active and the binary InP layers were estimated separately.

Publication
IEICE TRANSACTIONS on transactions Vol.E68-E No.8 pp.521-523
Publication Date
1985/08/25
Publicized
Online ISSN
DOI
Type of Manuscript
LETTER
Category
Optical and Quantum Electronics

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