IEICE TRANSACTIONS on transactions
1.55
m GaInAsP/InP Buried Heterostructure Lasers with Multiple p-n Current Blocking Layer Entirely Grown by Low-Pressure OMVPE
Summary :
1.55µm GaInAsP/InP BH lasers with multiple p-n current blocking layer were fabricated entirely by low-pressure OMVPE. The undercut portions were filled in a manner similar to mass transport process. The laser shows a threshold current of 48 mA at 300 K under CW operation.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.2 pp.92-94
- Publication Date
- 1986/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Optical and Quantum Electronics
Authors
Keyword
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Masashi NAGASHIMA, Yasuyuki MIYAMOTO, Chiaki WATANABE, Yasuharu SUEMATSU, Kazuhito FURUYA, "1.55m GaInAsP/InP Buried Heterostructure Lasers with Multiple p-n Current Blocking Layer Entirely Grown by Low-Pressure OMVPE" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 2, pp. 92-94, February 1986, doi: .
Abstract: 1.55µm GaInAsP/InP BH lasers with multiple p-n current blocking layer were fabricated entirely by low-pressure OMVPE. The undercut portions were filled in a manner similar to mass transport process. The laser shows a threshold current of 48 mA at 300 K under CW operation.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_2_92/_p
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@ARTICLE{e69-e_2_92,
author={Masashi NAGASHIMA, Yasuyuki MIYAMOTO, Chiaki WATANABE, Yasuharu SUEMATSU, Kazuhito FURUYA, },
journal={IEICE TRANSACTIONS on transactions},
title={1.55m GaInAsP/InP Buried Heterostructure Lasers with Multiple p-n Current Blocking Layer Entirely Grown by Low-Pressure OMVPE},
year={1986},
volume={E69-E},
number={2},
pages={92-94},
abstract={1.55µm GaInAsP/InP BH lasers with multiple p-n current blocking layer were fabricated entirely by low-pressure OMVPE. The undercut portions were filled in a manner similar to mass transport process. The laser shows a threshold current of 48 mA at 300 K under CW operation.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - 1.55m GaInAsP/InP Buried Heterostructure Lasers with Multiple p-n Current Blocking Layer Entirely Grown by Low-Pressure OMVPE
T2 - IEICE TRANSACTIONS on transactions
SP - 92
EP - 94
AU - Masashi NAGASHIMA
AU - Yasuyuki MIYAMOTO
AU - Chiaki WATANABE
AU - Yasuharu SUEMATSU
AU - Kazuhito FURUYA
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 2
JA - IEICE TRANSACTIONS on transactions
Y1 - February 1986
AB - 1.55µm GaInAsP/InP BH lasers with multiple p-n current blocking layer were fabricated entirely by low-pressure OMVPE. The undercut portions were filled in a manner similar to mass transport process. The laser shows a threshold current of 48 mA at 300 K under CW operation.
ER -
English
