IEICE TRANSACTIONS on transactions
Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE
Summary :
Fabrication of GaInAsP/InP heterostructure lasers for 1.5 µm wavelength region by organometallic vapor phase epitaxy are discussed. Results of growth conditions, which were experimentally found important to obtain the low threshold current density (
- Publication
- IEICE TRANSACTIONS on transactions Vol.E70-E No.2 pp.121-129
- Publication Date
- 1987/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Optical and Quantum Electronics
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Yasuyuki MIYAMOTO, Chiaki WATANABE, Masashi NAGASHIMA, Kazuhito FURUYA, Yasuharu SUEMATSU, "Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE" in IEICE TRANSACTIONS on transactions,
vol. E70-E, no. 2, pp. 121-129, February 1987, doi: .
Abstract: Fabrication of GaInAsP/InP heterostructure lasers for 1.5 µm wavelength region by organometallic vapor phase epitaxy are discussed. Results of growth conditions, which were experimentally found important to obtain the low threshold current density (
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_2_121/_p
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@ARTICLE{e70-e_2_121,
author={Yasuyuki MIYAMOTO, Chiaki WATANABE, Masashi NAGASHIMA, Kazuhito FURUYA, Yasuharu SUEMATSU, },
journal={IEICE TRANSACTIONS on transactions},
title={Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE},
year={1987},
volume={E70-E},
number={2},
pages={121-129},
abstract={Fabrication of GaInAsP/InP heterostructure lasers for 1.5 µm wavelength region by organometallic vapor phase epitaxy are discussed. Results of growth conditions, which were experimentally found important to obtain the low threshold current density (
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE
T2 - IEICE TRANSACTIONS on transactions
SP - 121
EP - 129
AU - Yasuyuki MIYAMOTO
AU - Chiaki WATANABE
AU - Masashi NAGASHIMA
AU - Kazuhito FURUYA
AU - Yasuharu SUEMATSU
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 2
JA - IEICE TRANSACTIONS on transactions
Y1 - February 1987
AB - Fabrication of GaInAsP/InP heterostructure lasers for 1.5 µm wavelength region by organometallic vapor phase epitaxy are discussed. Results of growth conditions, which were experimentally found important to obtain the low threshold current density (
ER -
English
