A new reference voltage generator for megabit DRAMs is proposed. The supply voltage dependence of the generator is successfully suppressed in comparison with the conventional reference voltage circuit. It is shown that the Vcc Margin of DRAM operation can be noticeably improved by using this generator.
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Takayuki KOBAYASHI, Koji SAKUI, Masaki MOMODOMI, Sadayuki YOKOYAMA, Yasuo ITOH, Mitsugi OGURA, "Improvement of Vcc Margin in a Reference Voltage Generator for Megabit DRAMs" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 4, pp. 270-271, April 1986, doi: .
Abstract: A new reference voltage generator for megabit DRAMs is proposed. The supply voltage dependence of the generator is successfully suppressed in comparison with the conventional reference voltage circuit. It is shown that the Vcc Margin of DRAM operation can be noticeably improved by using this generator.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_4_270/_p
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@ARTICLE{e69-e_4_270,
author={Takayuki KOBAYASHI, Koji SAKUI, Masaki MOMODOMI, Sadayuki YOKOYAMA, Yasuo ITOH, Mitsugi OGURA, },
journal={IEICE TRANSACTIONS on transactions},
title={Improvement of Vcc Margin in a Reference Voltage Generator for Megabit DRAMs},
year={1986},
volume={E69-E},
number={4},
pages={270-271},
abstract={A new reference voltage generator for megabit DRAMs is proposed. The supply voltage dependence of the generator is successfully suppressed in comparison with the conventional reference voltage circuit. It is shown that the Vcc Margin of DRAM operation can be noticeably improved by using this generator.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Improvement of Vcc Margin in a Reference Voltage Generator for Megabit DRAMs
T2 - IEICE TRANSACTIONS on transactions
SP - 270
EP - 271
AU - Takayuki KOBAYASHI
AU - Koji SAKUI
AU - Masaki MOMODOMI
AU - Sadayuki YOKOYAMA
AU - Yasuo ITOH
AU - Mitsugi OGURA
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1986
AB - A new reference voltage generator for megabit DRAMs is proposed. The supply voltage dependence of the generator is successfully suppressed in comparison with the conventional reference voltage circuit. It is shown that the Vcc Margin of DRAM operation can be noticeably improved by using this generator.
ER -