A new method is proposed for determining the parasitic extrinsic resistances of MESFETs and HEMTs from the measured S-parameters under active bias. The proposed method is based on the fact that the difference between drain resistance (Rd) and source resistance (Rs) can be found from the measured S-parameters under zero bias condition. It is possible to define the new internal device including intrinsic device and three extrinsic resistances by eliminating the parasitic imaginary terms. Three resistances can be calculated easily via the presented explicit three equations, which are induced from the fact that 1) the real parts of Yint,11 and Yint,12 of intrinsic Y-parameters are very small or almost zero, 2) the transformation relations between S-, Z-, and Y-matrices. The modelled S-parameters calculated by the obtained resistances and all the other equivalent circuit parameters are in good agreement with the measured S-parameters up to 40 GHz.

In this paper, a 24GHz transformer-coupled VCO is presented for a wide linear tuning range in the 0.13-µm CMOS process. The measured results of the proposed VCO show that the center frequency is 23.5GHz with 7.4% frequency tuning range. The output frequency curve has wide linear tuning region (5.5%) at the middle of the curve. Also, the VCO exhibits good phase noise of -110.23dBc/Hz at an offset frequency of 1 MHz. It has a compact chip size of 430 × 500µm2. The VCO core DC power consumption is 5.4mW at 1.35V VDD.