A New Method for the Determination of the Extrinsic Resistances of MESFETs and HEMTs from the Measured S-Parameters under Active Bias
Summary :
A new method is proposed for determining the parasitic extrinsic resistances of MESFETs and HEMTs from the measured S-parameters under active bias. The proposed method is based on the fact that the difference between drain resistance (Rd) and source resistance (Rs) can be found from the measured S-parameters under zero bias condition. It is possible to define the new internal device including intrinsic device and three extrinsic resistances by eliminating the parasitic imaginary terms. Three resistances can be calculated easily via the presented explicit three equations, which are induced from the fact that 1) the real parts of Yint,11 and Yint,12 of intrinsic Y-parameters are very small or almost zero, 2) the transformation relations between S-, Z-, and Y-matrices. The modelled S-parameters calculated by the obtained resistances and all the other equivalent circuit parameters are in good agreement with the measured S-parameters up to 40 GHz.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.3 pp.839-846
- Publication Date
- 2002/03/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Microwaves, Millimeter-Waves
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Jong-Sik LIM, Byung-Sung KIM, Sangwook NAM, "A New Method for the Determination of the Extrinsic Resistances of MESFETs and HEMTs from the Measured S-Parameters under Active Bias" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 3, pp. 839-846, March 2002, doi: .
Abstract: A new method is proposed for determining the parasitic extrinsic resistances of MESFETs and HEMTs from the measured S-parameters under active bias. The proposed method is based on the fact that the difference between drain resistance (Rd) and source resistance (Rs) can be found from the measured S-parameters under zero bias condition. It is possible to define the new internal device including intrinsic device and three extrinsic resistances by eliminating the parasitic imaginary terms. Three resistances can be calculated easily via the presented explicit three equations, which are induced from the fact that 1) the real parts of Yint,11 and Yint,12 of intrinsic Y-parameters are very small or almost zero, 2) the transformation relations between S-, Z-, and Y-matrices. The modelled S-parameters calculated by the obtained resistances and all the other equivalent circuit parameters are in good agreement with the measured S-parameters up to 40 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_3_839/_p
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@ARTICLE{e85-c_3_839,
author={Jong-Sik LIM, Byung-Sung KIM, Sangwook NAM, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Method for the Determination of the Extrinsic Resistances of MESFETs and HEMTs from the Measured S-Parameters under Active Bias},
year={2002},
volume={E85-C},
number={3},
pages={839-846},
abstract={A new method is proposed for determining the parasitic extrinsic resistances of MESFETs and HEMTs from the measured S-parameters under active bias. The proposed method is based on the fact that the difference between drain resistance (Rd) and source resistance (Rs) can be found from the measured S-parameters under zero bias condition. It is possible to define the new internal device including intrinsic device and three extrinsic resistances by eliminating the parasitic imaginary terms. Three resistances can be calculated easily via the presented explicit three equations, which are induced from the fact that 1) the real parts of Yint,11 and Yint,12 of intrinsic Y-parameters are very small or almost zero, 2) the transformation relations between S-, Z-, and Y-matrices. The modelled S-parameters calculated by the obtained resistances and all the other equivalent circuit parameters are in good agreement with the measured S-parameters up to 40 GHz.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - A New Method for the Determination of the Extrinsic Resistances of MESFETs and HEMTs from the Measured S-Parameters under Active Bias
T2 - IEICE TRANSACTIONS on Electronics
SP - 839
EP - 846
AU - Jong-Sik LIM
AU - Byung-Sung KIM
AU - Sangwook NAM
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2002
AB - A new method is proposed for determining the parasitic extrinsic resistances of MESFETs and HEMTs from the measured S-parameters under active bias. The proposed method is based on the fact that the difference between drain resistance (Rd) and source resistance (Rs) can be found from the measured S-parameters under zero bias condition. It is possible to define the new internal device including intrinsic device and three extrinsic resistances by eliminating the parasitic imaginary terms. Three resistances can be calculated easily via the presented explicit three equations, which are induced from the fact that 1) the real parts of Yint,11 and Yint,12 of intrinsic Y-parameters are very small or almost zero, 2) the transformation relations between S-, Z-, and Y-matrices. The modelled S-parameters calculated by the obtained resistances and all the other equivalent circuit parameters are in good agreement with the measured S-parameters up to 40 GHz.
ER -
English
