A scheme for a low-voltage CMOS syllabic-companding log domain filter with wide dynamic range is proposed and its prototype is presented. A nodal voltage which is fixed in a conventional filter based on the dynamically adjustable biasing (DAB) technique is adapted for change of input envelope to achieve wide dynamic range. Externally linear and time invariant (ELTI) relation between an input and an output is guaranteed by a state variable correction (SVC) circuit which is also proposed for low-voltage operation. To demonstrate the proposed scheme, a fifth-order Chebychev low-pass filter with 100-kHz cutoff frequency is designed and fabricated in a standard 0.35-µm CMOS process. The filter has a 78-dB dynamic range and consumes 200-µW power from a 0.8-V power supply.

This paper proposes a synthesis method of all low-voltage CMOS instantaneous-companding log domain integrators. The method is based on the exhaustive search of all low-voltage CMOS instantaneous-companding log domain integrators. All the integrators are derived from a general block diagram. A function of each block can be realized by any of a family of circuits and elemental circuits chosen from such families are combined to build an integrator. It is clarified that each family contains a few circuit topologies. All topologies of integrators including new ones are obtained from combinational procedure. Comparing characteristics of all generated integrators, ones satisfying required performances are found out.

This paper presents a 7-bit 1.5-GS/s time-interleaved (TI) SAR ADC. The scheme achieves better isolation between sub-ADCs thanks to embedding a track-and-hold (T/H) amplifier and reference voltage buffer in each sub-ADC. The proposed dynamic T/H circuit enables high-speed, low-power operation. The prototype is fabricated in a 65-nm CMOS technology. The total active area is 0.14,mm2 and the ADC consumes 36 mW from a 1.2-V supply. The measured results show the peak spurious-free dynamic range (SFDR) and signal-to-noise-and-distortion ratio (SNDR) are 52.4 dB and 39.6 dB, respectively, and an figure of Merit (FoM) of 300 fJ/conv. is achieved.

This paper presents a self-calibrating dynamic latched comparator with a stochastic offset voltage detector that can be realized by using simple digital circuitry. An offset voltage of the comparator is compensated by using a statistical calibration scheme, and the offset voltage detector uses the uncertainty in the comparator output. Thanks to the simple offset detection technique, all the calibration circuitry can be synthesized using only standard logic cells. This paper also gives a design methodology that can provide the optimal design parameters for the detector on the basis of fundamental statistics, and the correctness of the design methodology was statistically validated through measurement. The proposed self-calibrating comparator system was fabricated in a 180 nm 1P6M CMOS process. The prototype achieved a 38 times improvement in the three-sigma of the offset voltage from 6.01 mV to 158 µV.