This paper presents an ultra-wideband (UWB) bandpass filter using a combination of broadside-coupled structure and lumped-capacitor-loaded shunt stub resonator. The broadside-coupled microstrip-to-coplanar waveguide structure provides an ultra-wide bandpass filtering operation and keeps a good stopband at lower frequencies from DC at the same time. The lumped-capacitor-loaded shunt stub resonator creates two transmission zeros (attenuation poles which can be located at the outsides of the two bandedges of the UWB bandpass filter to improve the out-band performance by selecting a suitable combination of the length of the shunt stubs and the capacitance of the loaded chip capacitors. The filter was designed based on electromagnetic simulation for broadside-coupled structure, microwave circuit simulation and experiments for determining the transmission zeros. The filter was fabricated on a one-layer dielectric substrate. The measured results demonstrated that the developed UWB bandpass filter has good performance: low insertion loss about 0.46 dB and low group delay about 0.26 ns at the center of the passband and very flat over the whole passband, and less than -10 dB reflection over the passband. The implemented transmission zeros, particularly at the low frequency end, dramatically improved the out-band performance, leading the filter satisfy the FCC's spectrum mask not only for indoor but also for outdoor applications. These poles improved also the skirt performance at both bandedges of the filter. A lowpass filter has been also introduced and integrated with the proposed bandpass filter to have a further improvement of the out-band performance at the high frequency end. The filters integrated with lowpass section exhibit excellent filter performance: almost satisfying the FCC's spectrum mask from DC to 18 GHz. The developed UWB bandpass filter has a compact size of 4 cm1.5 cm, or 4.8 cm1.5 cm with lowpass section implemented.

Transmission line metamaterials on coplanar waveguide with series-capacitive and shunt-inductive distributed loading in periodical intervals are characterized using our developed fullwave self-calibrated method of moments. Firstly, the two effective per-unit-length transmission parameters, i.e., complex propagation constant and characteristic impedance, are numerically extracted. The results provide a straightforward insight into the forward- and backward-wave propagation characteristics in several distinctive bands, including the left- and right-handed stopbands and passbands. In particular, it is demonstrated that in the whole left-handed passband, the propagation constant has purely negative phase constant while the characteristic impedance has only positive real quantity. Next, varied left- and right-handed passbands are studied in terms of lower/higher cut-off frequencies based on ideal equivalent circuit model and practical distributed CPW elements, respectively. Of particular importance, the left-handed and right-handed passbands find to be able to be directly connected with a seamless bandgap under the condition that normalized inductance and capacitance of loaded CPW inductive and capacitive elements become exactly the same with each other. Finally, the 9-cell metamaterial circuits on CPW with actual 50 Ω feed lines are designed and implemented for experimental validation on the derived per-unit-length parameters.

In this paper, a notch-band implemented UWB bandpass filter was proposed. The filter was realized by integrating a full ultra-wideband bandpass filter using broadside coupling structure with a bandstop filter using in-line open stub. The in-line open stub was installed in the removed area in the broadside coupled microstrip conductors, which demonstrated a narrow notch-band performance. The proposed filters were designed based on the electromagnetic simulation and fabricated using a wet etching system. Parameter study of length dependence of the notch-band was carried out. The first resonant frequency of the in-line stub appears when the length is approximately equal to one quarter of the guided wavelength. Based on this fact, the notch-band can be adjusted to almost any specified band in the UWB passband. A three-section notch-band implemented filter demonstrated good characteristics: its full frequency bandwidth form 2.8 GHz to 10.2 GHz, good insertion loss of 0.6 dB and 1.0 dB at the centers of the first and second bands respectively, and flat and small group delay of less than 0.40 ns over main pass band, and a large attenuation stopband about 55 dB at 5.63 GHz. A lowpass filter was also introduced in order to improve the out-band performance, by which the measured results show an excellent attenuation better than 30 dB from 10.4 GHz to 17.8 GHz.

This letter presents a 12-bit column-parallel hybrid two-step successive approximation register/single-slope analog-to-digital converter (SAR/SS ADC) for CMOS image sensor (CIS). For achieving a high conversion speed, a simple SAR ADC is used in upper 6-bit conversion and a conventional SS ADC is used in lower 6-bit conversion. To reduce the power consumption, a comparator is shared in each column, and a 6-bit ramp generator is shared by all columns. This ADC is designed in SMIC 0.18µm CMOS process. At a clock frequency of 22.7MHz, the conversion time is 3.2µs. The ADC has a DNL of -0.31/+0.38LSB and an INL of -0.86/+0.8LSB. The power consumption of each column ADC is 89µW and the ramp generator is 763µW.

This paper presents a technique for miniaturization of microstrip line and coplanar waveguide for microwave integrated circuits by using airbridge technology. A theoretical analysis is given by a combination of the conformal mapping technique and the variational principle. Numerical results demonstrate significant effects on size reduction as well as wide range of the characteristic impedance variation due to the airbridge.

In this paper, we present an analysis of microstrip line with a trapezoidal dielectric ridge in multilayered media. The method employed in this characterization is called partial-boundary element method (p-BEM) which provides an efficient technique to the analysis of the structures with multilayered media. To improve the convergence of the Green's function used in the analysis with the P-BEM, we employ a technique based on a combination of the Fourier series expansion and the method of images. Treatment on convergence for the boundary integrals is also described. After this treatment, it requires typically one tenth or one hundredth of Fourier terms to obtain the same accuracy compared with the original Green's function. Numerical results are presented for two microstrip lines that have a trapezoidal dielectric ridge placed on a one-layered substrate and a two-layered substrate. These numerical results demonstrate the effects on the characteristics of the microstrip line due to the existence of the dielectric ridge as well as the second layer between the ridge and the fundamental substrate.

In this paper, the characteristics of microstrip lines near the edge of dielectric substrate are analyzed by improving the rectangular boundary division method. The numerical results indicate the changes of the characteristics of a microstrip line when the strip conductor is closely located to the edge. When the distance the dielectric substrate edge to the strip conductor is less than the thickness of dielectric substrate, the effects of the edge on the line characteristics are no longer negligible. The numerical results in this paper show high computation accuracy without increasing computation time. Our improvement is effective for the analysis of the microstrip lines both for the narrow strip conductor and the strip conductor close to the edge. The relative errors between the numerical results and the measured values are less than 1.2%.

In this paper, we present an analysis of the microstrip lines whose strip conductors are of various cross-sections, such as rectangular cross-section, triangle cross-section, and half-cycle cross-section. The method employed is the boundary integral equation method (BIEM). Numerical results for these microstrip lines demonstrate various shape effects of the strip conductor on the characteristics of lines. The processing technique on the convergence of the Green's function is also described.

This paper shows activities of the ultra wideband (UWB) research and development consortium organized by the National Institute of Information and Communications Technology (NICT). Fully CMOS monolithic microwave integrate circuits (MMICs) are designed and fabricated both for the multiband OFDM and the impulse radio. UWB transceivers are constructed with the MMICs as their front-end devices and evaluated by some measurements such as time domain waveform, spectrum, error vector magnitude, and so on. To show the application capabilities of the UWB transceivers, two kinds of video transmission system are constructed and demonstrated.

In this paper, we presented an analysis of single and coupled microstrip lines covered with protective dielectric film which is usually used in the microwave integrated circuits. The method employed in the characterization is called partial-boundary element method (p-BEM). The p-BEM provides an efficient means to the analysis of the structures with multilayered media or covered with protective dielectric film. The numerical results show that by changing the thickness of the protective dielectric films such as SiO2, Si and Polyimide covered on these lines on a GaAs substrate, the coupled microstrip lines vary within 10% on the characteristic impedance and within 25% on the effective dielectric constant for the odd mode of coupled microstrip line, respectively, in comparison with the structures without the protective dielectric film. In contrast, the single microstrip lines vary within 4% on the characteristic impedance and within 8% on the effective dielectric constant, respectively. The protective dielectric film affects the odd mode of the coupled lines more strongly than the even mode and the characteristics of the single microstrip lines.

In this paper, we present for the first time two three-dimensional analytical electrostatic Green's functions for shielded and open arbitrarily multilayered medium structures. The analytical formulas for the Green's functions are simply expressed in the form of Fourier series and integrals, and are applicable to the arbitrary number of dielectric layers. In combination with the complex image charge method, we demonstrate an efficient application to analyze microstrip discontinuities in a three-layered dielectric structure. Numerical results for the capacitance associated with on open-end discontinuity show good agreement with those from a previous paper and the effectiveness of using the analytical Green's functions to analyze three-dimensional electrostatic problems.